Abstract
Reducing the delay of backend interconnects is critical in delivering improved performance in next generation computer chips. One option is to implement interlayer dielectric (ILD) materials with increasingly lower dielectric constant (k) values. Despite industry need, there has been a recent decrease in study and production of these materials in academia and business communities. We have generated a backbone and porogen system that allows us to control porosity from 0 to 60% volume, achieve k-values from 3.4 to 1.6, maintain high chemical stability to various wet cleans, and deliver uniquely high mechanical strength at a given porosity. Finite element modeling and experimental results demonstrate that further improvements can be achieved through control of the pore volume into an ordered network. With hopes to spur more materials development, this paper discusses some molecular design and nanoscale hierarchical principles relevant to making next generation low-k ILD materials.
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ACKNOWLEDGMENTS
Kris Vanstreels and IMEC for nano indentation measurements. Han Li at Intel for nano-indentation and aDCB measurements. Mark Lemay and Eungnak Han for PMO patterning support. Brian Krist and Gaiying Yang for TEM support. Rami Hourani, Shane Harlson, Marie Krysak, Steve Putna, and Kent Frasure for chemical synthesis, deposition, and characterization work. Jeff Callipare, Jack Mitchell, Brian Barley, and Bob Hankel for film deposition, capacitance, and EP measurements. Mike Bowen for ALD support. Satyarth Suri for etch development work. Marc French for XRD support. Mike Terzich for SEM support. Jeff Bielefeld, Canay Ege, Sean King, Ebony Mays, David Collins, and Veronica Strong for helpful discussions and other support.
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Michalak, D.J., Blackwell, J.M., Torres, J.M. et al. Porosity scaling strategies for low-k films. Journal of Materials Research 30, 3363–3385 (2015). https://doi.org/10.1557/jmr.2015.313
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DOI: https://doi.org/10.1557/jmr.2015.313