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Electrophysical and structural properties of the composite quantum wells In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As with ultrathin InAs inserts

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Abstract

The electrophysical and structural properties of InAlAs/InGaAs/InAlAs quantum wells (QWs) with thin InAs inserts were investigated by means of Hall effect measurements and scanning transmission electron microscopy. The analyzed heterostructures are nearly the same ones using for high electron mobility transistors manufacturing except for heavily doped contact top layer. The increase of the electron mobility and concentration in the heterostructures with thin InAs layers in the center of the InGaAs QW as compared with the uniform QW was found and this effect strongly depended on the technological conditions during growth of the InAs inserts. The dependence of the InAs insert structural quality and heterointerface width on the As4 beam equivalent pressure PAs was revealed. The decreased PAs is required for obtaining uniform and smooth InAs inserts as opposed to higher PAs resulting in the interface spreading and lateral composition inhomogeneity of the InAs insert.

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ACKNOWLEDGMENT

This work is supported by the Ministry of Education and Science of the Russian Federation (research identifier RFMEFI60414X0003).

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Authors and Affiliations

  1. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    Galib Barievich Galiev, Evgeniy Aleksandrovich Klimov, Sergey Sergeevich Pushkarev, Aleksey Nikolaevich Klochkov & Petr Pavlovich Maltsev

  2. Department of Condensed Matter Physics, National Nuclear Research University “MEPhI”, 115409, Moscow, Russia

    Ivan Sergeevich Vasil’evskii

  3. National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia

    Mihail Yuryevich Presniakov, Igor Nikolaevich Trunkin & Aleksandr Leonidovich Vasiliev

  4. A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences, 119333, Moscow, Russia

    Aleksandr Leonidovich Vasiliev

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  1. Galib Barievich Galiev
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  2. Ivan Sergeevich Vasil’evskii
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  3. Evgeniy Aleksandrovich Klimov
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  4. Sergey Sergeevich Pushkarev
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  5. Aleksey Nikolaevich Klochkov
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  6. Petr Pavlovich Maltsev
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  7. Mihail Yuryevich Presniakov
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  8. Igor Nikolaevich Trunkin
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  9. Aleksandr Leonidovich Vasiliev
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Correspondence to Sergey Sergeevich Pushkarev.

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Galiev, G.B., Vasil’evskii, I.S., Klimov, E.A. et al. Electrophysical and structural properties of the composite quantum wells In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As with ultrathin InAs inserts. Journal of Materials Research 30, 3020–3025 (2015). https://doi.org/10.1557/jmr.2015.266

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  • DOI: https://doi.org/10.1557/jmr.2015.266

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