Abstract
The present study focuses on a quantitative analysis of electrical resistivity in monovalent-doped manganites La1−xAgxMnO3 (x = 0.05 and 0.1). The electrical resistivity data in the ferromagnetic (FM) metallic phase are analyzed by considering a temperature-independent inelastic scattering of the electrons (due to domain and grain boundaries, defects, etc.) and other temperature-dependent elastic scattering mechanisms (electron–electron, electron–phonon, and electron–magnon). The Debye and Einstein temperatures are deduced from the model Hamiltonian containing potential energy contribution from the long-range Coulomb, van der Waals (vdW) interaction, and short-range repulsive interaction up to the second-neighbor ions. The electron–phonon scattering partially describes the reported FM metallic resistivity behavior with temperature for La1−xAgxMnO3 (x = 0.05 and 0.1). The T2 and T4.5 terms accounting for electron–electron and electron–magnon interactions are essential for the correct description of resistivity. The Mott–Ioffe–Regel criterion for metallic conductivity is valid, and kFl ∼ 1, εFτ ∼ 1.
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Financial assistance from MPCST, Bhopal, India is gratefully acknowledged.
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Varshney, D., Choudhary, D. & Khan, E. Electrical transport in the ferromagnetic state of silver substituted manganites La1−xAgxMnO3 (x = 0.05 and 0.1). Journal of Materials Research 30, 654–665 (2015). https://doi.org/10.1557/jmr.2014.400
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DOI: https://doi.org/10.1557/jmr.2014.400