Abstract
Commonly used techniques for cleaning copper substrates before graphene growth via chemical vapor deposition (CVD), such as rinsing with acetone, nitric, and acetic acid, and high temperature hydrogen annealing still leave residual adventitious carbon on the copper surface. This residual carbon promotes graphene nucleation and leads to higher nucleation density. We find that copper with an oxidized surface can act as a self-cleaning substrate for graphene growth by CVD. Under vacuum conditions, copper oxide thermally decomposes, releasing oxygen from the substrate surface. The released oxygen reacts with the carbon residues on the copper surface and forms volatile carbon monoxide and carbon dioxide, leaving a clean copper surface free of carbon for large-area graphene growth. Using oxidized electropolished copper foil leads to a reduction in graphene nucleation density by over a factor of 1000 when compared to using chemically cleaned oxygen free copper foil.
Similar content being viewed by others
References
X. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, and R.S. Ruoff: Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324(5932), 1312–1314 (2009).
M. Batzill: The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects. Surf. Sci. Rep. 67(3–4), 83–115 (2012).
Z. Yan, J. Lin, Z. Peng, Z. Sun, Y. Zhu, L. Li, C. Xiang, E.L.C. Samuel, C. Kittrell, and J.M. Tour: Toward the synthesis of wafer-scale single-crystal graphene on copper foils. ACS Nano 6(10), 9110–9117 (2012).
Q. Yu, L.A. Jauregui, W. Wu, R. Colby, J. Tian, Z. Su, H. Cao, Z. Liu, D. Pandey, D. Wei, T.F. Chung, P. Peng, N.P. Guisinger, E.A. Stach, J. Bao, S-S. Pei, and Y.P. Chen: Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. Nat. Mater. 10(6), 443–449 (2011).
W. Wu, L.A. Jauregui, Z. Su, Z. Liu, J. Bao, Y.P. Chen, and Q. Yu: Growth of single crystal graphene arrays by locally controlling nucleation on polycrystalline Cu using chemical vapor deposition. Adv. Mater. 23(42), 4898–4903 (2011).
Y.A. Wu, Y. Fan, S. Speller, G.L. Creeth, J.T. Sadowski, K. He, A.W. Robertson, C.S. Allen, and J.H. Warner: Large single crystals of graphene on melted copper using chemical vapor deposition. ACS Nano 6(6), 5010–5017 (2012).
D. Geng, B. Wu, Y. Guo, L. Huang, Y. Xue, J. Chen, G. Yu, L. Jiang, W. Hu, and Y. Liu: Uniform hexagonal graphene flakes and films grown on liquid copper surface. Proc. Natl. Acad. Sci. U.S.A. 109(21), 7992–7996 (2012).
H. Wang, G. Wang, P. Bao, S. Yang, W. Zhu, X. Xie, and W-J. Zhang: Controllable synthesis of submillimeter single-crystal monolayer graphene domains on copper foils by suppressing nucleation. J. Am. Chem. Soc. 134(8), 3627–3630 (2012).
X. Li, C.W. Magnuson, A. Venugopal, R.M. Tromp, J.B. Hannon, E.M. Vogel, L. Colombo, and R.S. Ruoff: Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper. J. Am. Chem. Soc. 133(9), 2816–2819 (2011).
Y. Zhang, L. Zhang, P. Kim, M. Ge, Z. Li, and C. Zhou: Vapor trapping growth of single-crystalline graphene flowers: Synthesis, morphology, and electronic properties. Nano Lett. 12(6), 2810–2816 (2012).
L. Gao, W. Ren, H. Xu, L. Jin, Z. Wang, T. Ma, L-P. Ma, Z. Zhang, Q. Fu, L-M. Peng, X. Bao, and H-M. Cheng: Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum. Nat. Commun. 3, 699 (2012).
T. Iwasaki, H.J. Park, M. Konuma, D.S. Lee, J.H. Smet, and U. Starke: Long-range ordered single-crystal graphene on high-quality heteroepitaxial Ni thin films grown on MgO(111). Nano Lett. 11(1), 79–84 (2011).
Z. Luo, Y. Lu, D.W. Singer, M.E. Berck, L.A. Somers, B.R. Goldsmith, and A.T.C. Johnson: Effect of substrate roughness and feedstock concentration on growth of wafer-scale graphene at atmospheric pressure. Chem. Mater. 23(6), 1441–1447 (2011).
H. Ago, Y. Ogawa, M. Tsuji, S. Mizuno, and H. Hibino: Catalytic growth of graphene: Toward large-area single-crystalline graphene. J. Phys. Chem. Lett. 3(16), 2228–2236 (2012).
J.D. Wood, S.W. Schmucker, A.S. Lyons, E. Pop, and J.W. Lyding: Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. Nano Lett. 11(11), 4547–4554 (2011).
H. Kim, C. Mattevi, M.R. Calvo, J.C. Oberg, L. Artiglia, S. Agnoli, C.F. Hirjibehedin, M. Chhowalla, and E. Saiz: Activation energy paths for graphene nucleation and growth on Cu. ACS Nano 6(4), 3614–3623 (2012).
S. Choubak, M. Biron, P.L. Levesque, R. Martel, and P. Desjardins: No graphene etching in purified hydrogen. J. Phys. Chem. Lett. 4(7), 1100–1103 (2013).
A. Santoni and J. Urban: AES and EELS investigation of carbonaceous layers on Cu(110) and Cu(100). Surf. Sci. 186(3), 376–382 (1987).
E. Loginova, N.C. Bartelt, P.J. Feibelman, and K.F. McCarty: Factors influencing graphene growth on metal surfaces. New J. Phys. 11(6), 063046 (2009).
B. Zhang, W.H. Lee, R. Piner, I. Kholmanov, Y. Wu, H. Li, H. Ji, and R.S. Ruoff: Low-temperature chemical vapor deposition growth of graphene from toluene on electropolished copper foils. ACS Nano 6(3), 2471–2476 (2012).
A.C. Ferrari and D.M. Basko: Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 8(4), 235–246 (2013).
L.M. Malard, M.A. Pimenta, G. Dresselhaus, and M.S. Dresselhaus: Raman spectroscopy in graphene. Phys. Rep. 473(5–6), 51–87 (2009).
X. Li, W. Cai, L. Colombo, and R.S. Ruoff: Evolution of graphene growth on Ni and Cu by carbon isotope labeling. Nano Lett. 9(12), 4268–4272 (2009).
S. Chen, L. Brown, M. Levendorf, W. Cai, S-Y. Ju, J. Edgeworth, X. Li, C.W. Magnuson, A. Velamakanni, R.D. Piner, J. Kang, J. Park, and R.S. Ruoff: Oxidation resistance of graphene-coated Cu and Cu/Ni alloy. ACS Nano 5(2), 1321–1327 (2011).
S. Poulston, P.M. Parlett, P. Stone, and M. Bowker: Surface oxidation and reduction of CuO and Cu2O studied using XPS and XAES. Surf. Interface Anal. 24(12), 811–820 (1996).
C.E. Dubé, B. Workie, S.P. Kounaves, A. Robbat, M.L. Aksub, and G. Davies: Electrodeposition of metal alloy and mixed oxide films using a single-precursor tetranuclear copper-nickel complex. J. Electrochem. Soc. 142(10), 3357–3365 (1995).
A. Goswami and Y.N. Trehan: The thermal decomposition of cupric oxide in vacuo. Proc. Phys. Soc. B 70, 1005 (1957).
Z.H. Gan, G.Q. Yu, B.K. Tay, C.M. Tan, Z.W. Zhao, and Y.Q. Fu: Preparation and characterization of copper oxide thin films deposited by filtered cathodic vacuum arc. J. Phys. D: Appl. Phys. 37(1), 81 (2004).
Y.S. Gong, C. Lee, and C.K. Yang: Atomic force microscopy and Raman spectroscopy studies on the oxidation of Cu thin films. J. Appl. Phys. 77(10), 5422–5425 (1995).
K. Kodera, I. Kusunoki, and S. Shimizu: Dissociation pressures of various metallic oxides. Bull. Chem. Soc. Jpn. 41(5), 1039–1045 (1968).
B. Hallstedt, D. Risold, and L.J. Gauckler: Thermodynamic assessment of the copper-oxygen system. J. Phase Equilib. 15(5), 483–499 (1994).
K.L. Chavez and D.W. Hess: A novel method of etching copper oxide using acetic acid. J. Electrochem. Soc. 148(11), G640–G643 (2001).
Y. Hao, M.S. Bharathi, L. Wang, Y. Liu, H. Chen, S. Nie, X. Wang, H. Chou, C. Tan, B. Fallahazad, H. Ramanarayan, C.W. Magnuson, E. Tutuc, B.I. Yakobson, K.F. McCarty, Y-W. Zhang, P. Kim, J. Hone, L. Colombo, and R.S. Ruoff: The role of surface oxygen in the growth of large single-crystal graphene on copper. Science 342(6159), 720–723 (2013).
Z.R. Robinson, E.W. Ong, T.R. Mowll, P. Tyagi, D.K. Gaskill, H. Geisler, and C.A. Ventrice; Influence of chemisorbed oxygen on the growth of graphene on Cu(100) by chemical vapor deposition. J. Phys. Chem. C 117(45), 23919–23927 (2013).
ACKNOWLEDGMENTS
Carl W. Magnuson gratefully appreciates support from Sandia National Labs LDRD fellowship program. We thank the Keck Foundation (749046) and ONR (N00014-10-1-0254) for support.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Magnuson, C.W., Kong, X., Ji, H. et al. Copper oxide as a “self-cleaning” substrate for graphene growth. Journal of Materials Research 29, 403–409 (2014). https://doi.org/10.1557/jmr.2013.388
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2013.388