Abstract
Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results indicated that the sample oxidized and nitrided at 700 °C possessed the highest effective dielectric constant of 18.22 and electrical breakdown field of 10.7 MV/cm at a current density of 10−6 A/cm2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density. The Fowler–Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 1.22 eV.
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G.D. Wilk, R.M. Wallace, and J.M. Anthony: High-κ gate dielectrics: Current status and materials properties considerations. J. Appl. Phys. 89, 5243 (2001).
Y.H. Wong and K.Y. Cheong: ZrO2 thin films on Si substrate. J. Mater. Sci. - Mater. Electron. 21, 980 (2010).
M.S. Lee, C-H. An, K. Park, J-Y. Choi, and H. Kim: Effect of Y, Gd, Dy, and Ce doping on the microstructural and electrical properties of sol-gel-deposited ZrO2 film. J. Electrochem. Soc. 158, G133 (2011).
I. Jõgi, K. Kukli, M. Ritala, M. Leskelä, J. Aarik, A. Aidla, and J. Lu: Atomic layer deposition of high capacitance density Ta2O5-ZrO2 based dielectrics for metal-insulator-metal structures. Microelectron. Eng. 87, 144 (2010).
S. Miyazaki: Characterization of high-k gate dielectric/silicon interfaces. Appl. Surf. Sci. 190, 66 (2002).
T. Yamaguchi, H. Satake, and N. Fukushima: Band diagram and carrier conduction mechanisms in ZrO2 MIS structures. IEEE Trans. Electron Devices 51, 774 (2004).
B. Lee, K.J. Choi, A. Hande, M.J. Kim, R.M. Wallace, J. Kim, Y. Senzaki, D. Shenai, H. Li, M. Rousseau, and J. Suydam: A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films. Microelectron. Eng. 86, 272 (2009).
A.M. Torres-Huerta, M.A. Domínguez-Crespo, E. Ramírez-Meneses, and J.R. Vargas-García: MOCVD of zirconium oxide thin films: Synthesis and characterization. Appl. Surf. Sci. 255, 4792 (2009).
L.Q. Zhu, Q. Fang, G. He, M. Liu, and L.D. Zhang: Interfacial and optical properties of ZrO2/Si by reactive magnetron sputtering. Mater. Lett. 60, 888 (2006).
L-Z. Hsieh, H-H. Ko, P-Y. Kuei, and C-Y. Lee: Growth evolution of ZrO2 from deposited Zr metal during thermal oxidation. Jpn. J. Appl. Phys. 45, 7680 (2006).
H.D. Kim, S.W. Jeong, M.T. You, and Y. Roh: Effects of annealing gas (N2, N2O, O2) on the characteristics of ZrSixOy/ZrO2 high-k gate oxide in MOS devices. Thin Solid Films 515, 522 (2006).
Y. Nagasato, T. Aya, Y. Iwazaki, M. Hasumi, T. Ueno, and K. Kuroiwa: Low-temperature fabrication of ultrathin ZrO2/Si structure using metal deposition followed by oxygen annealing. Jpn. J. Appl. Phys. 44, 5 (2005).
R.M.C. de Almeida and I.J.R. Baumvol: Reaction-diffusion in high-k dielectrics on Si. Surf. Sci. Rep. 49, 1 (2003).
S.A. Campbell and R.C. Smith: Chemical vapour deposition. In High-κ Gate Dielectrics, edited by M. Houssa (Institute of Physics: Bristol, UK and Philadelphia, PA, 2004), pp. 65–88.
L-M. Chen, Y-S. Lai, and J.S. Chen: Influence of pre-deposition treatments on the interfacial and electrical characteristics of ZrO2 gate dielectrics. Thin Solid Films 515, 3724 (2007).
H. Ishii, A. Nakajima, and S. Yokoyama: Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics. J. Appl. Phys. 95, 536 (2004).
M. Koyama, K. Suguro, M. Yoshiki, Y. Kamimuta, M. Koike, M. Ohse, C. Hongo, and A. Nishiyama: Thermally stable ultra-thin nitrogen incorporated ZrO2 gate dielectric prepared by low temperature oxidation of ZrN. International Electron Devices Meeting (IEDM), Washington, DC, 2001; IEEE: New Jersey, p. 459.
Y. Enta, K. Suto, S. Takeda, H. Kato, and Y. Sakisaka: Oxynitridation of Si(100) surface with thermally excited N2O gas. Thin Solid Films 500, 129 (2006).
Y.H. Wong and K.Y. Cheong: Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas. J. Alloys Compd. 509, 8728 (2011).
Y.H. Wong and K.Y. Cheong: Effects of oxidation and nitridation temperatures on electrical properties of sputtered Zr thin film based on Si in N2O ambient. Electron. Mater. Lett. 8, 47 (2012).
Y.H. Wong and K.Y. Cheong: Electrical characteristics of oxidized/nitrided Zr thin film on Si. J. Electrochem. Soc. 158, H1270 (2011).
Y.H. Wong and K.Y. Cheong: Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si. Nano. Res. Lett. 6, 489 (2011).
F-C. Chiu, Z-H. Lin, C-W. Chang, C-C. Wang, K-F. Chuang, C-Y. Huang, J.Y-M. Lee, and H-L. Hwang: Electrical conduction mechanisms of metal/La2O3/Si structure. J. Appl. Phys. 97, 034506 (2005).
J. Wang, L. Zhao, N.H. Luu, D. Wang, and H. Nakashima: Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering. Appl. Phys. A: Mater. Sci. Process. 80, 1781 (2005).
D.K. Schroder: Semiconductor Material, and Device Characterization (Wiley, New Jersey, 2006).
T. Kurniawan, K.Y. Cheong, K. Abdul Razak, Z. Lockman, and N. Ahmad: Oxidation of sputtered Zr thin film on Si substrate. J. Mater. Sci. - Mater. Electron. 22, 143 (2011).
P.G. Tanner, S. Dimitrijev, and H.B. Harrison: Slow trap profiling-a new technique for characterising slow traps in MOS dielectrics. Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings, Canberra, Australia, 1996; IEEE: New Jersey, p. 211.
S. Dimitrijev, P.G. Tanner, and H.B. Harrison: Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates. Microelectron. Reliab. 39, 441 (1999).
K.P.S.S. Hembram, G. Dutta, U.V. Waghmare, and G. Mohan Rao: Electrical and structural properties of zirconia thin films prepared by reactive magnetron sputtering. Physica B 399, 21 (2007).
Y. Xiaolong, X. Qianghua, and M. Tao: Electrical breakdown in a two-layer dielectric in the MOS structure. Mater. Res. Soc. Symp. Proc. 811, D2.8.1 (2004).
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One of the authors (YHW) would like to acknowledge University of Malaya for the financial support through UMRG program (Grant No. RP013D-13AET) and PRPUM (Grant No. CG022-2013).
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Wong, Y.H., Cheong, K.Y. Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient. Journal of Materials Research 28, 2985–2989 (2013). https://doi.org/10.1557/jmr.2013.281
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DOI: https://doi.org/10.1557/jmr.2013.281