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Adsorption on epitaxial graphene on SiC(0001)

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Abstract

Graphene, a single atomic sheet of sp2-bonded carbon atoms arranged in a honeycomb lattice, exhibits extraordinary electrical and mechanical properties, attracting much attention in both academia and industry. The preparation of high quality large-area graphene and the tuning of graphene electronic properties are important topics in this field. In this feature paper, we review our recent work on epitaxial graphene (EG) on SiC(0001). First, we introduce the bottom-up growth mechanism of the first few EG layers on SiC(0001), and the modification of graphene electronic properties by means of surface transfer doping with electron withdrawing materials (F4-TCNQ and MoO3). Next, we summarize the adsorption behaviors of organic (PTCDA, ClAlPc, and C60F48) and inorganic (bismuth) materials on EG/SiC(0001). Finally, as an example of tuning the electronic properties of graphene by reducing its dimensionality, we demonstrate the molecular self-assembly of atomically precise armchair graphene nanoribbons with varying widths and electronic structures.

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References

  1. A.K. Geim and K.S. Novoselov: The rise of graphene. Nat. Mater. 6, 183 (2007).

    CAS  Google Scholar 

  2. A.K. Geim: Graphene: Status and prospects. Science 324, 1530 (2009).

    Article  CAS  Google Scholar 

  3. A.H. Castro Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, and A.K. Geim: The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009).

    Article  CAS  Google Scholar 

  4. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, and A.A. Firsov: Electric field effect in atomically thin carbon films. Science 306, 666 (2004).

    CAS  Google Scholar 

  5. W. Chen, H. Xu, L. Liu, X.Y. Gao, D.C. Qi, G.W. Peng, S.C. Tan, Y.P. Feng, K.P. Loh, and A.T.S. Wee: Atomic structure of the 6H-SiC(0001) nanomesh. Surf. Sci. 596, 176 (2005).

    Article  CAS  Google Scholar 

  6. W. Chen, S. Chen, D.C. Qi, X.Y. Gao, and A.T.S. Wee: Surface transfer p-type doping of epitaxial graphene. J. Am. Chem. Soc. 129, 10418 (2007).

    Article  CAS  Google Scholar 

  7. W. Chen and A.T.S. Wee: Self-assembly on silicon carbide nanomesh templates. J. Phys. D: Appl. Phys. 40, 6287 (2007).

    Article  CAS  Google Scholar 

  8. X.Y. Gao, S. Chen, T. Liu, W. Chen, A.T.S. Wee, T. Nomoto, S. Yagi, K. Soda, and J. Yuhara: Disorder beneath epitaxial graphene on SiC(0001): An x-ray absorption study. Phys. Rev. B 78, 201404 (2008).

    Article  CAS  Google Scholar 

  9. S.W. Poon, W. Chen, E.S. Tok, and A.T.S. Wee: Probing epitaxial growth of graphene on silicon carbide by metal decoration. Appl. Phys. Lett. 92, 104102 (2008).

    Article  CAS  Google Scholar 

  10. H. Huang, W. Chen, S. Chen, and A.T.S. Wee: Bottom-up growth of epitaxial graphene on 6H-SiC(0001). ACS Nano 2, 2513 (2008).

    Article  CAS  Google Scholar 

  11. X.Y. Gao, S. Chen, T. Liu, W. Chen, A.T.S. Wee, T. Nomoto, S. Yagi, K. Soda, and J. Yuhara: Si clusters on reconstructed SiC (0001) revealed by surface extended x-ray absorption fine structure. Appl. Phys. Lett. 95, 144102 (2009).

    Article  CAS  Google Scholar 

  12. W. Chen, D.C. Qi, X.Y. Gao, and A.T.S. Wee: Surface transfer doping of semiconductors. Prog. Surf. Sci. 84, 279 (2009).

    Article  CAS  Google Scholar 

  13. H. Huang, S. Chen, X.Y. Gao, W. Chen, and A.T.S. Wee: Structural and electronic properties of PTCDA thin films on epitaxial graphene. ACS Nano 3, 3431 (2009).

    Article  CAS  Google Scholar 

  14. Y.H. Lu, W. Chen, Y.P. Feng, and P.M. He: Tuning the electronic structure of graphene by an organic molecules. J. Phys. Chem. B 113, 2 (2009)

    Article  CAS  Google Scholar 

  15. J.T. Sun, Y.H. Lu, W. Chen, Y.P. Feng, and A.T.S. Wee: Linear tuning of charge carriers in graphene by organic molecules and charge-transfer complexes. Phys. Rev. B 81, 155403 (2010).

    Article  CAS  Google Scholar 

  16. S. Chen, W. Chen, H. Huang, X.Y. Gao, D.C. Qi, Y.Z. Wang, and A.T.S. Wee: Template-directed molecular assembly on silicon carbide nanomesh: Comparison between CuPc and pentacene. ACS Nano 4, 849 (2010).

    Article  CAS  Google Scholar 

  17. Z.Y. Chen, I. Santoso, R. Wang, L.F. Xie, H.Y. Mao, H. Huang, Y.Z. Wang, X.Y. Gao, Z.K. Chen, D.G. Ma, A.T.S. Wee, and W. Chen: Surface transfer hole doping of epitaxial graphene using MoO3 thin film. Appl. Phys. Lett. 96, 213104 (2010).

    Article  CAS  Google Scholar 

  18. W. Chen, S. Chen, Z.H. Ni, H. Huang, D.C. Qi, X.Y. Gao, Z.X. Shen, and A.T.S. Wee: Band-bending at the graphene–SiC interfaces: Effect of the substrate. Jpn. J. Appl. Phys. 49, 01AH05 (2010).

    Google Scholar 

  19. S.W. Poon, W. Chen, A.T.S. Wee, and E.S. Tok: Growth dynamics and kinetics of monolayer and multilayer graphene on a 6H-SiC(0001) substrate. Phys. Chem. Chem. Phys. 12, 13522 (2010).

    Article  CAS  Google Scholar 

  20. H. Huang, S.L. Wong, C-C. Tin, Z.Q. Luo, Z.X. Shen, W. Chen, and A.T.S. Wee: Epitaxial growth and characterization of graphene on free-standing polycrystalline 3C-SiC. J. Appl. Phys. 110, 014308 (2011).

    Article  CAS  Google Scholar 

  21. S.L. Wong, H. Huang, Y.Z. Wang, L. Cao, D.C. Qi, I. Santoso, W. Chen, and A.T.S. Wee: Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source. ACS Nano 5, 7662 (2011).

    Article  CAS  Google Scholar 

  22. S.L. Wong, H. Huang, W. Chen, and A.T.S. Wee: STM studies of epitaxial graphene. MRS Bull. 37, 1195–1202 (2012).

    Article  CAS  Google Scholar 

  23. H. Huang, S.L. Wong, J.T. Sun, W. Chen, and A.T.S. Wee: Trapping single polar molecules in SiC nanomesh via out-of-plane dipoles. ACS Nano 6, 2774 (2012).

    Article  CAS  Google Scholar 

  24. J.T. Sun, H. Huang, S.L. Wong, H-J. Gao, Y.P. Feng, and A.T.S. Wee: Energy-gap opening in a Bi(110) nanoribbon induced by edge reconstruction. Phys. Rev. Lett. 109, 246804 (2012).

    Article  CAS  Google Scholar 

  25. H. Huang, D.C. Wei, J.T. Sun, S.L. Wong, Y.P. Feng, A.H. Castro Neto, and A.T.S. Wee. Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons. Sci. Rep. 2, 983 (2012).

    Article  CAS  Google Scholar 

  26. X.J. Yu, O. Wilhelmi, H.O. Moser, S.V. Vidyaraj, X.Y. Gao, A.T.S. Wee, T. Nyunt, H.J. Qian, and H.W. Zheng: New soft x-ray facility SINS for surface and nanoscale science at SSLS. J. Electron. Spectrosc. Relat. Phenom. 144, 1031 (2005).

    Article  CAS  Google Scholar 

  27. K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, S.V. Morozov, and A.K. Geim: Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005).

    CAS  Google Scholar 

  28. X.L. Li, G.Y. Zhang, X.D. Bai, X.M. Sun, X.R. Wang, E. Wang, and H.J. Dai: Highly conducting graphene sheets and Langmuir-Blodgett films. Nat. Nanotechnol. 3, 538 (2008).

    Article  CAS  Google Scholar 

  29. T.A. Land, T. Michely, R.J. Behm, J.C. Hemminger, and G. Comsa: STM investigation of single layer graphite structures produced on Pt(111) by hydrocarbon decomposition. Surf. Sci. 264, 261 (1992).

    Article  CAS  Google Scholar 

  30. A. Nagashima, K. Nuka, H. Itoh, T. Ichinokawa, C. Oshima, and S. Otani: Electronic states of monolayer graphite formed on TiC(111) surface. Surf. Sci. 291, 93 (1993).

    Article  CAS  Google Scholar 

  31. S. Bae, H. Kim, Y. Lee, X.F. Xu, J.S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H.R. Kim, Y.I. Song, Y.J. Kim, K.S. Kim, B. Ozyilmaz, J.H. Ahn, B.H. Hong, and S. Iijima: Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat. Nanotechnol. 5, 574 (2010).

    Article  CAS  Google Scholar 

  32. X.S. Li, W.W. Cai, L. Colombo, and R.S. Ruoff: Evolution of graphene growth on Ni and Cu by carbon isotope labeling. Nano Lett. 9, 4268 (2009).

    Article  CAS  Google Scholar 

  33. L. Elena, C.B. Norman, J.F. Peter, and F.M. Kevin: Evidence for graphene growth by C cluster attachment. New J. Phys. 10, 093026 (2008).

    Article  CAS  Google Scholar 

  34. P.W. Sutter, J-I. Flege, and E.A. Sutter: Epitaxial graphene on ruthenium. Nat. Mater. 7, 406 (2008).

    Article  CAS  Google Scholar 

  35. A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M.S. Dresselhaus, and J. Kong: Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 9, 30 (2008).

    Article  CAS  Google Scholar 

  36. J. Coraux, A.T. N’Diaye, M. Engler, C. Busse, D. Wall, N. Buckanie, F. Heringdorf, R. van Gastel, B. Poelsema, and T. Michely: Growth of graphene on Ir(111). New J. Phys. 11, 023006 (2009).

    Article  CAS  Google Scholar 

  37. C. Berger, Z.M. Song, T.B. Li, X.B. Li, A.Y. Ogbazghi, R. Feng, Z.T. Dai, A.N. Marchenkov, E.H. Conrad, P.N. First, and W.A. de Heer: Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B 108, 19912 (2004).

    Article  CAS  Google Scholar 

  38. K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, L. Ley, J.L. McChesney, T. Ohta, S.A. Reshanov, J. Rohrl, E. Rotenberg, A.K. Schmid, D. Waldmann, H.B. Weber, and T. Seyller: Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat. Mater. 8, 203 (2009).

    Article  CAS  Google Scholar 

  39. A. Bostwick, J. McChesney, T. Ohta, E. Rotenberg, T. Seyller, and K. Horn: Experimental studies of the electronic structure of graphene. Prog. Surf. Sci. 84, 380 (2009).

    Article  CAS  Google Scholar 

  40. P.N. First, W.A. de Heer, T. Seyller, C. Berger, J.A. Stroscio, and J-S. Moon: Epitaxial graphenes on silicon carbide. MRS Bull. 35, 296 (2010).

    Article  CAS  Google Scholar 

  41. J.S. Moon, D. Curtis, S. Bui, M. Hu, D.K. Gaskill, J.L. Tedesco, P. Asbeck, G.G. Jernigan, B.L. VanMil, R.L. Myers-Ward, C.R. Eddy, P.M. Campbell, and X. Weng: Top-gated epitaxial graphene FETs on Si-Face SiC wafers with a peak transconductance of 600 mS/mm. IEEE Electron Device Lett. 31, 260 (2010).

    Article  CAS  Google Scholar 

  42. R.S. Singh, V. Nalla, W. Chen, A.T.S. Wee, and W. Ji: Laser patterning of epitaxial graphene for Schottky junction photodetectors. ACS Nano 5, 5969 (2011).

    Article  CAS  Google Scholar 

  43. M.W.K. Nomani, R. Shishir, M. Qazi, D. Diwan, V.B. Shields, M.G. Spencer, G.S. Tompa, N.M. Sbrockey, and G. Koley: Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC. Sens. Actuators, B 150, 301 (2010).

    Article  CAS  Google Scholar 

  44. A.J. Van Bommel, J.E. Crombeen, and A. Van Tooren: LEED and Auger electron observations of the SiC(0001) surface. Surf. Sci. 48, 463 (1975).

    Article  Google Scholar 

  45. K.V. Emtsev, F. Speck, T. Seyller, L. Ley, and J.D. Riley: Interaction, growth, and ordering of epitaxial graphene on SiC(0001) surfaces: A comparative photoelectron spectroscopy study. Phys. Rev. B 77, 155303 (2008).

    Article  CAS  Google Scholar 

  46. P. Lauffer, K.V. Emtsev, R. Graupner, T. Seyller, L. Ley, S.A. Reshanov, and H.B. Weber: Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy. Phys. Rev. B 77, 155426 (2008).

    Article  CAS  Google Scholar 

  47. I. Gierz, C. Riedl, U. Starke, C.R. Ast, and K. Kern: Atomic hole doping of graphene. Nano Lett. 8, 4603 (2008).

    Article  CAS  Google Scholar 

  48. G. Giovannetti, P.A. Khomyakov, G. Brocks, V.M. Karpan, J. van den Brink, and P. J. Kelly: Doping graphene with metal contacts. Phys. Rev. Lett. 101, 026803 (2008).

    Article  CAS  Google Scholar 

  49. M. Garnica, D. Stradi, S. Barja, F. Calleja, C. Diaz, M. Alcami, N. Martin, A.L. Vazauez de Parga, F. Martin, and R. Miranda: Long-range magnetic order in a purely organic 2D layer adsorbed on epitaxial graphene. Nat. Phys. 9, 368 (2013).

    Article  CAS  Google Scholar 

  50. X.R. Wang, S.M. Tabakman, and H.J. Dai: Atomic layer deposition of metal oxides on pristine and functionalized graphene. J. Am. Chem. Soc. 130, 8152 (2008).

    Article  CAS  Google Scholar 

  51. Q.H. Wang, and M.C. Hersam: Room-temperature molecular-resolution characterization of self-assembled organic monolayers on epitaxial graphene. Nat. Chem. 1, 206 (2009).

    Article  CAS  Google Scholar 

  52. H. Dil, J. Lobo-Checa, R. Laskowski, P. Blaha, S. Erner, J. Osterwalder, and T. Greber: Surface trapping of atoms and molecules with dipole rings. Science 319, 1824 (2008).

    Article  CAS  Google Scholar 

  53. F. Varchon, P. Mallet, J.Y. Veuillen, and L. Magaud: Ripples in epitaxial graphene on the Si-terminated SiC(0001) surface. Phys. Rev. B 77, 235412 (2008).

    Article  CAS  Google Scholar 

  54. S. Kera, H. Yamane, H. Honda, H. Fukagawa, K.K. Okudaira, and N. Ueno: Photoelectron fine structures of uppermost valence band for well-characterized ClAl-phthalocyanine ultrathin film: Ups and MAES study. Surf. Sci. 566, 571 (2004).

    Article  CAS  Google Scholar 

  55. C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke: Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. Phys. Rev. Lett. 103, 246804 (2009).

    Article  CAS  Google Scholar 

  56. C.L. Song, Y.L. Wang, Y.P. Jiang, Y. Zhang, and C.Z. Chang: Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy. Appl. Phys. Lett. 97, 143118 (2010).

    Article  CAS  Google Scholar 

  57. Y.W. Son, M.L. Cohen, and S.G. Louie: Energy gaps in graphene nanoribbons. Phys. Rev. Lett. 97, 216803 (2006).

    Article  CAS  Google Scholar 

  58. J.M. Cai, P. Ruffieux, R. Jaafar, M. Bieri, T. Braun, S. Blankenburg, M. Muoth, A.P. Seitsonen, M. Saleh, X.L. Feng, K. Mullen, and R. Fasel: Atomically precise bottom-up fabrication of graphene nanoribbons. Nature 466, 470 (2010).

    Article  CAS  Google Scholar 

  59. P. Ruffieux, J.M. Cai, N.C. Plumb, L. Patthey, D. Prezzi, A. Ferretti, E. Molinari, X.L. Feng, K. Mullen, C.A. Pignedoli, and R. Fasel: Electronic structure of atomically precise graphene nanoribbons. Acs Nano 6, 6930 (2012).

    Article  CAS  Google Scholar 

  60. M. Koch, F. Ample, C. Joachim, and L. Grill: Voltage-dependent conductance of a single graphene nanoribbon. Nat. Nanotechnol. 7, 713 (2012).

    Article  CAS  Google Scholar 

  61. S. Linden, D. Zhang, A. Timmer, N. Aghdassi, J.H. Franke, H. Zhang, X. Feng, K. Mullen, H. Fuchs, L. Chi, and H. Zacharias: Electronic structure of specially aligned graphene nanoribbons on Au(788). Phys. Rev. Lett. 108, 216801 (2012).

    Article  CAS  Google Scholar 

  62. T.W. Odom, J.L. Huang, P. Kim, and C.M. Lieber: Atomic structure and electronic properties of single-walled carbon nanotubes. Nature 391, 62 (1998).

    Article  CAS  Google Scholar 

  63. S. Clair, Y. Kim, and M. Kawai: Energy level alignment of single-walled carbon nanotubes on metal surfaces. Phys. Rev. B 83, 245422 (2011).

    Article  CAS  Google Scholar 

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ACKNOWLEDGMENTS

We acknowledge the financial support from NRF-CRP Grant Nos. R-143-000-360-281: “Graphene and Related Materials and Devices” and R-144-000-295-281: “Novel 2D materials with tailored properties – beyond graphene”. Dr. Han Huang acknowledges the “Shenghua Professorship” startup funding from Central South University.

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Authors and Affiliations

  1. Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, School of Physics and Electronics, Central South University, Changsha, China, 410083

    Han Huang

  2. Department of Physics, National University of Singapore, Singapore, Singapore, 117542

    Han Huang & Andrew Thye Shen Wee

  3. Graphene Research Center, National University of Singapore, Singapore, Singapore, 117546

    Han Huang & Andrew Thye Shen Wee

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  1. Han Huang
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  2. Andrew Thye Shen Wee
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Correspondence to Han Huang or Andrew Thye Shen Wee.

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Huang, H., Wee, A.T.S. Adsorption on epitaxial graphene on SiC(0001). Journal of Materials Research 29, 447–458 (2014). https://doi.org/10.1557/jmr.2013.236

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