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The influence of ∑3 twin boundaries on the formation of radiation-induced defect clusters in nanotwinned Cu

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Abstract

We investigate the collective effect of a high volume fraction of ∑3 twin boundaries on the response of nanotwinned Cu to high dose He implantation near room temperature and find that they do not curtail the formation of vacancy and interstitial clusters. This result is rationalized through atomistic modeling, which shows that point defects at these boundaries have nearly identical properties to those in pure fcc Cu.

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Acknowledgment

The authors thank R.R. Greco for conducting the He implantations for this study. This research was funded by the LANL Directed Research and Development program. The replacement collision sequence, collision cascade, and reaction-diffusion modeling was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. 2008LANL1026 through the Center for Materials at Irradiation and Mechanical Extremes, an Energy Frontier Research Center. XZ acknowledges financial support by NSF-DMR metallic materials and nanostructures program under Grant No. 0644835.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA

    Michael J. Demkowicz

  2. Department of Mechanical Engineering, Materials Science and Engineering Program, Texas A&M University, College Station, Texas, 77843, USA

    Osman Anderoglu & Xinghang Zhang

  3. MPA-CINT: Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA

    Osman Anderoglu & Amit Misra

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  1. Michael J. Demkowicz
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Demkowicz, M.J., Anderoglu, O., Zhang, X. et al. The influence of ∑3 twin boundaries on the formation of radiation-induced defect clusters in nanotwinned Cu. Journal of Materials Research 26, 1666–1675 (2011). https://doi.org/10.1557/jmr.2011.56

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