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Phase transformation in self-assembled Gd silicide nanostructures on Si(001)

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Abstract

Gd silicide nanostructures epitaxially grown on Si(001) are studied by plan-view transmission electron microscopy and associated nanobeam electron diffraction, as well as scanning tunneling microscopy. The nanobeam diffraction measurements show a direct correlation between the nanostructure morphology, either nanowires or islands, and the silicide crystal structure. Scanning tunneling microscopy shows a phase transformation from nanowires to islands that nucleate at nanowire intersections. A specific mechanism for this transformation is proposed that explains nanowire growth behavior previously observed on vicinal Si surfaces.

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Acknowledgment

This work was supported by the NSF through Grant No. DMR-0305472. The JEOL 2200FS TEM was acquired in part by funds from NSF Grant No. DMR-0079578. Jun Nogami acknowledges support from the National Sciences and Engineering Research Council (NSERC) Canada.

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Authors and Affiliations

  1. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan, 48824-1226, USA

    Gangfeng Ye & Martin A. Crimp

  2. Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario, Canada, M5S 3E4

    Jun Nogami

  3. Nanolab Technologies, San Jose, California, 95134, USA

    Gangfeng Ye

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  1. Gangfeng Ye
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  2. Martin A. Crimp
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  3. Jun Nogami
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Ye, G., Crimp, M.A. & Nogami, J. Phase transformation in self-assembled Gd silicide nanostructures on Si(001). Journal of Materials Research 26, 2276–2281 (2011). https://doi.org/10.1557/jmr.2011.176

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  • DOI: https://doi.org/10.1557/jmr.2011.176

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