Abstract
The dependences of unit cell parameter, x-ray diffraction line width B, and microhardness H on the composition of PbTe-Bi2Te3 (0–10 mol% Bi2Te3) semiconductor alloys, subjected to different types of heat treatment, were obtained. In the concentration ranges ∼0.5–1.5 and 3–4 mol% Bi2Te3 within the homogeneity region of PbTe (0–6 mol% Bi2Te3), anomalous constancy or decrease in B and H was observed. A long room temperature aging leads to a more distinct manifestation of these effects. It is suggested that the observed peculiarities in the concentration dependences of the properties are connected with percolation effects and self-organization processes in the solid solution.
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References
E.I. Rogacheva: Concentration-dependent microhardness in semiconductor solid solutions. Izv. Akad. Nauk. SSSR. Neorgan. Mater. 25, 754 (1989).
E.I. Rogacheva, N.A. Sinelnik, and O.N. Nashchekina: Concentration anomalies of properties in Pb(1-x)Ge(x)Te solid solutions. Acta Phys. Pol. A 84, 729 (1993).
E.I. Rogacheva, I.M. Krivulkin, V.P. Popov, and T.A. Lobkovskaya: Concentration dependences of properties in Pb1-xMnxTe solid solutions. Phys. Status Solidi A. 148, K65 (1995).
E.I. Rogacheva, A.S. Sologubenko, and I.M. Krivulkin: Microhardness of Pb1-xMnxTe semimagnetic solid solutions. Inorg. Mater. 34, 545 (1998).
E.I. Rogacheva and I.M. Krivulkin: Isotherms of thermal conductivity in PbTe-MnTe solid solutions. Fiz. Tverd. Tela. 43, 1000 (2001).
E.I. Rogacheva and I.M. Krivulkin: The temperature and concentration dependences of the charge carrier mobility in PbTe-MnTe solid solutions. Semiconductors 36, 966 (2002).
E.I. Rogacheva: Self-organization processes in impurity subsystem of solid solutions. J. Phys. Chem. Solids 64, 1579 (2003).
E.I. Rogacheva: Critical phenomena in heavily-doped semiconducting compounds. Jpn. J. Appl. Phys. 32. Suppl. 32-3, 775 (1993).
D. Stauffer and A. Aharony: Introduction to Percolation Theory (Taylor & Francis, Washington, DC, 1992), pp. 127–134.
G.V. Gorne, N.K. Zhigareva, A.B. Ivanova, and E.I. Rogacheva: Chemical interaction in SnTe-based solid solutions in the Sn-In-Te system. Izv. AN. SSSR. Neorg. Mater. 23, 1152 (1987).
G.V. Gorne, N.K. Zhigareva, A.B. Ivanova, and E.I. Rogacheva: X-ray study of the solid solutions based on SnTe in the Sn-Bi-Te system. Izv. AN. SSSR. Neorg. Mater. 24, 1214 (1988).
G.V. Gorne, N.K. Zhigareva, A.B. Ivanova, and E.I. Rogacheva: X-ray study of the mechanism of formation of solid solution based on tin telluride. Izv. AN. SSSR. Neorg. Mater. 25, 955 (1989).
E.I. Rogacheva, G.V. Gorne, N.K. Zhigareva, and A.B. Ivanova: Influence of thermal treatment on the solubility of indium in tin monotelluride. Inorg. Mater. 27, 198 (1991).
E.I. Rogacheva: The specificity of structure and electrical behavior of multinary solid solutions formed by chemical compounds. Phys. Status Solidi C. 6, 1307 (2009).
V. Fano: Lead telluride and its alloys. In: CRC Handbook of Thermoelectrics, edited by D.M. Rowe (CRC Press, Boca Raton, 1995), p. 257.
A.V. Lyubchenko, E.A. Sal’kov, and F.F. Sizov: Physical Foundations of Semiconductor Infrared Photoelectronics. (Naukova Dumka, Kiev, 1984), p. 254 [in Russian].
N.Kh. Abrikosov and L.E. Shelimova: Semiconducting Materials Based on A4B6 Compounds. (Nauka, Moscow, 1975), p. 195 [in Russian].
E.I. Rogacheva and S.G. Lyubchenko: Thermoelectric and mechanical properties of lead telluride doped with bismuth. J. Thermoelectricity 3, 24 (2005).
T.V. Tavrina, E.I. Rogacheva, and V.I. Pinegin: Structural, thermoelectric and galvanomagnetic properties of PbTe-BiTe semiconductor solid solutions. Mold. J. Phys. Sci. 4, 430 (2005).
E.I. Rogacheva, S.A. Laptev, V.S. Ploskaya, and B.A. Efimova: PbTe based solid solutions in the Pb-Bi-Te system. Izv. Akad. Nauk. SSSR. Neorgan. Mater. 20, 1350 (1984).
B.M. Goltsman, B.A. Kudinov, and I.A. Smirnov: Bi2Te3 - Based Semiconducting Thermoelectric Materials. (Nauka, Moscow, 1972), p. 320 [in Russian].
L.E. Shelimova, O.G. Karpinskii, P.P. Konstantinov, E.S. Avilov, M.A. Kretova, I.Yu. Nikhezina, and V.S. Zemskov: Thermoelectric materials based on intermediate phases in the systems formed by lead and bismuth chalcogenides. Perspektivnye. Materialy. 5, 5 (2009).
N.S. Golovanova, V.P. Zlomanov, O.I. Tananaeva, and L.D. Licheva: Doping lead telluride crystals with bismuth during growth. Izv. Akad. Nauk. SSSR. Neorgan. Mater. 20, 574 (1984).
T. Suzuki, H. Yoshinaga, and S. Takeuchi: Dislocation Dynamics and Plasticity (Mir, Moscow, 1989), pp. 78–85.
Ya.S. Umanskii: X-Ray Study of Metals and Semiconductors (Metalurgiya, Moscow, 1969), p. 38.
B.I. Shklovskii and A.L. Efros: Electronic Properties of Doped Semiconductors (Springer-Verlag, New York, 1984).
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This work was supported by the Ukrainian Fundamental Research Foundation (Grant F25.2/189-2008).
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Rogacheva, E., Vodorez, O., Pinegin, V. et al. Evidence for self-organization processes in PbTe-Bi2Te3 semiconductor solid solutions. Journal of Materials Research 26, 1627–1633 (2011). https://doi.org/10.1557/jmr.2011.165
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DOI: https://doi.org/10.1557/jmr.2011.165