Abstract
Nowotny chimney-ladder compounds RuAl2 and RuGa2 have been substituted with p- and n-type dopants to study the resistivity, Seebeck and Hall coefficients, and thermal conductivity of resulting compounds in the temperature range of 80–300 K. The resistivity and Seebeck coefficient suggest that these compounds are degenerate semiconductors. Hall measurements reveal that the carrier concentration has indeed been changed by an order of magnitude, particularly in p-type RuGa2 by substituting Cr and Mn. Compared to p-type samples, the resistivity is an order of magnitude larger for n-type samples, for a similar level of carrier concentration. Interestingly, the hole mobility is two to three orders of magnitude larger, reaching the highest value of ∼750 cm2/V·s. The electron mobility is temperature independent and is typically in the range of ∼1–4 cm2/V·s. Thermal conductivity shows characteristics of mixed scattering with impurity scattering contributing appreciably in heavily substituted compositions.
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REFERENCES
H. Nowotny: Crystal chemistry of transition element defect silicides and related compounds, in The Chemistry of Extended Defects in Non-metallic Solids, edited by L.R. Eyring and M. O’Keeffe (North-Holland, Amsterdam, 1970), p. 223.
W. Jeitschko: Refinement of crystal structure of TiSi2 and some comments on bonding in TiSi2 and related compounds. Acta Crystallogr. B 33, 2347 (1977).
Y. Imai and A. Watanabe: Consideration of the validity of the 14 valence electron rule for semiconducting chimney-ladder phase compounds. Intermetallics 13, 233 (2005).
D.N. Basov, F.S. Pierce, P. Volkov, S.J. Poon, and T. Timusk: Optical conductivity of insulating Al-based alloys: Comparison of quasiperiodic and periodic Systems. Phys. Rev. Lett. 73, 1865 (1994).
P. Volko and S.J. Poon: Semiconducting behavior of the intermetallic compound Al2Ru. Europhys. Lett. 28, 271 (1994).
D. Mandrus, V. Keppens, B.C. Sales, and J.L. Sarrao: Unusual transport and large diamagnetism in the intermetallic semiconductor RuAl2. Phys. Rev. B 58, 3712 (1998).
J. Evers, G. Oehlinger, and H. Meyer: Semiconducting behaviour of RuGa2. Mater. Res. Bull. 19, 1177 (1984).
Y. Takagiwa, Y. Matsubayashi, A. Suzumura, J.T. Okada, and K. Kimura: Thermoelectric properties of binary semiconducting intermetallic compounds Al2Ru and Ga2Ru synthesized by spark plasma sintering process. Mater. Trans. 51, 988 (2010).
D.C. Fredrickson, S. Lee, and R. Hoffmann: The Nowotny chimney ladder phases: Whence the 14 electron rule? Inorg. Chem. 43, 6159 (2004).
M.A. Hayward, A.P. Ramirez, and R.J. Cava: Structure, stoichiometry, and properties of the chimney-ladder phases Ru2Ge3+x (0<x<1). J. Solid State Chem. 166, 389 (2002).
M.I. Fedorov and V.K. Zaitsev: Thermoelectrics of transition metal silicides, in Thermoelectrics Handbook, edited by D.M. Rowe (CRC Press, Boca Raton, FL, 2006), chap. 31.
T. Caillat, J.-P. Fleurial, and A. Borshchevsky: Growth and some properties of Cr11Ge19.J. Alloy. Comp. 252, 12 (1997).
L. Ivanenko, A. Filonov, V. Shaposhnikov, G. Behr, D. Souptel, J. Schumann, H. Vinzelberg, A. Plotnikov, and V. Borisenko: Transport properties of Mn-doped Ru2Si3. Microelectron. Eng. 70, 209 (2003).
U. Gottlieb, O. Laborde, A. Rouault, and R. Madar: Resistivity of Ru2Si3 single crystals. Appl. Surf. Sci. 73, 243 (1993).
Y. Takagiwa, J.T. Okada, and K. Kimura: Composition dependence of thermoelectric properties of binary narrow-gap Ga67−xRu33+x compound. J. Alloy. Comp. 507, 364 (2010).
Y. Amagai, A. Yamamoto, T. Iida, and Y. Takanashi: Thermoelectric properties of semiconductor-like intermetallic compounds TMGa3 (TM=Fe, Ru, and Os). J. Appl. Phys. 96, 5644 (2004).
D.N. Manh, G.T. de Laissardiere, J.P. Julien, D. Mayou, and F. Cyrot-Lackmann: Electronic structure and hybridization effects in the compounds Al2Ru and Ga2Ru. Solid State Commun. 82, 329 (1992).
M. Weinert and R.E. Watson: Hybridization-induced band gaps in transition-metal aluminides. Phys. Rev. B 58, 9732 (1998).
M. Springborg and R. Fischer: Electronic structures of three semiconducting intermetallics: RuAl2, RuGa2, and OsAl2. J. Phys. Condens. Matter 10, 701 (1998).
V. Fournée, E. Belin-Ferré, G. Trambly de Laissardière, A. Sadoc, P. Volkov, and S.J. Poon: The electronic structure of orthorhombic Al2Ru. J. Phys. Condens. Matter 9, 7999 (1997).
V.I. Fistul’: Heavily Doped Semiconductors (Plenum Press, New York, 1969).
G.A. Slack: The thermal conductivity of nonmetallic crystals, in Solid State Physics, Vol. 34, edited by H. Ehrenreich, F. Seitz, and D. Turnbull (Academic Press, New York, 1979), p. 1.
C. Wood: Materials for thermoelectric energy conversion. Rep. Prog. Phys. 51, 459 (1988).
ACKNOWLEDGMENTS
We thank Kevin Leikert for helping us in the synthesis of RuAl2-based compositions. We also thank Kevin Zhou for EDS composition analysis. This work was supported as part of the Center for Revolutionary Materials for Solid State Energy Conversion, an Energy Frontier Research Center, funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0001054.
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Ponnambalam, V., Lehr, G. & Morelli, D.T. Influence of p- and n-type doping on the transport properties of the Nowotny chimney-ladder compounds RuAl2 and RuGa2. Journal of Materials Research 26, 1907–1912 (2011). https://doi.org/10.1557/jmr.2011.126
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DOI: https://doi.org/10.1557/jmr.2011.126