Abstract
In this paper, polycrystalline CuIn(SxSe1-x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1-x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1-x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.
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Wang, G., Cheng, G., Hu, B. et al. Preparation of CuIn(SxSe1-x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2. Journal of Materials Research 25, 2426–2429 (2010). https://doi.org/10.1557/jmr.2010.0304
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DOI: https://doi.org/10.1557/jmr.2010.0304