Abstract
Previous computer simulations of multiple 10 keV Si cascades in 3C-SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, relative disorder, elastic modulus, and elastic constant, C11. These relationships provide evidence for the onset of both defect clustering and solid-state amorphization, which appear to be driven by local energy and elastic instabilities from the accumulation of defects. The results provide guidance on experimental approaches to reveal the onset of these processes.
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Weber, W.J., Gao, F. Irradiation-induced defect clustering and amorphization in silicon carbide. Journal of Materials Research 25, 2349–2353 (2010). https://doi.org/10.1557/jmr.2010.0292
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DOI: https://doi.org/10.1557/jmr.2010.0292