Abstract
High-pressure in situ angular dispersive x-ray diffraction study on the wurtzite-type InN nanowires has been carried out by means of the image-plate technique and diamond-anvil cell (DAC) up to about 31.8 GPa. The pressure-induced structural transition from the wurtzite to a rocksalt-type phase occurs at about 14.6 GPa, which is slightly higher than the transition pressure of InN bulk materials (~12.1 GPa). The relative volume reduction at the transition point is close to 17.88%, and the bulk modulus B0 is determined through fitting the relative volume-pressure experimental data related to the wurtzite and rocksalt phases to the Birch-Murnaghan equation of states. Moreover, high-pressure Raman scattering for InN nanowires were also investigated in DAC at room temperature. The corresponding structural transition was confirmed by assignment of phonon modes. We calculated the mode Griineisen parameters for the wurtzite and rocksalt phases of InN nanowires.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. Nakamura: III-V nitride based light-emitting devices. Solid State Commun. 102, 237 (1997).
J.W. Orton and C.T. Foxon: Group III nitride semiconductors for short wavelength light-emitting devices. Ren. Pros. Phys. 61, 1 (1998).
S.C. Jain, M. Willander, J. Narayan, and R.V. Overstraeten: III-nitrides: Growth, characterization, and properties. J. Appl. Phys. 87, 965 (2000).
M.A. Haase, J. Qiu, J.M. Depuydt, and H. Cheng: Blue-green laser diodes. Appl. Phys. Lett. 59, 1272 (1991).
H. Jeon, J. Ding, A.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi, and R.L. Gunshor: Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells. Appl. Phys. Lett. 59, 3619(1991)
J. Gaines, R. Drenten, K.W. Haberen, T. Marshall, P.M. Mensz, and J. Petruzzello: Blue-green injection lasers containing pseudo-morphic Zn1-xMgxSySe1-y cladding layers and operating up to 394 K. Appl. Phys. Lett. 62, 2462 (1993).
S.K. O’Leary, B.E. Foutz, M.S. Shur, U.V. Bhapkar, and L.F. Eastman: Electron transport in wurtzite indium nitride. J. Appl. Phys. 83, 826 (1998).
B.E. Foutz, S.K. O’Leafy, M.S. Shur, and L.F. Eastman: Transient electron transport in wurtzite GaN, InN, and AlN. J. Appl. Phys. 85, 7727 (1999)
J. Chen, G. Cheng, E. Stern, M.A. Reed, and Ph. Avouris: Electrically-excited infrared emission from InN transistors. Nano Lett. 7, 2276 (2007).
M. Ueno, M. Yoshida, A. Onodera, O. Shimomura, and K. Takemura: Stability of the wurtzite-type structure under high pressure: GaN and InN. Phys. Rev. B 49, 14 (1994).
C. Pinquier, F. Demangeot, J. Frandon, J.W. Pomeroy, M. Kuball, H. Hubel, N.W.A. van Uden, D.J. Dunstan, O. Briot, B. Maleyre, S. Ruffenach, and B. Gil: Raman scattering in hexagonal InN under high pressure. Phys. Rev. B 70, 113202 (2004).
C. Pinquier, F. Demangeot, J. Frandon, J-C. Chervin, A. Polian, B. Couzinet, P. Munsch, O. Briot, S. Ruffenach, B. Gil, and B. Maleyre: Raman scattering study of wurtzite and rocksalt InN under high pressure. Phys. Rev. B 73, 115211 (2006).
V.Yu. Davydov, V.V. Emtsev, I.N. Goncharuk, A.N. Smirnov, V.D. Petrikov, V.V. Mamutin, V.A. Vekshin, S.V. Ivanov, M.B. Smirnov, and T. Inushima: Experimental and theoretical studies of phonons in hexagonal InN. Appl. Phys. Lett. 75, 3297 (1999).
K. Sarasamak, A.J. Kulkarni, M. Zhou, and S. Limpijumnong: Stability of wurtzite, unbuckled wurtzite, and rocksalt phases of SiC, GaN, InN, ZnO, and CdSe under loading of different triaxi-alities. Phys. Rev. B 11, 024104 (2008).
A. Bhuiyan, A. Hashimoto, and A. Yamamoto: Indium nitride (InN): A review on growth, characterization, and properties. J. Appl. Phys. 94, 2779 (2003).
J. Wu, W. Walukiewicz, K.M. Yu, W.J. Auger III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Nanishi: Unusual properties of the fundamental band gap of InN. Appl. Phys. Lett. 80, 3967 (2002).
T.V. Shubina, S.V. Ivanov, V.N. Jmerik, D.D. Solnyshkov, V.A. Vekshin, P.S. Kop’ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar: Mie resonances, infrared emission, and the band gap of InN. Phys. Rev. Lett. 92, 117407 (2004).
Y. Nanishi, Y. Saito, and T. Yamaguchi: RF-molecular-beam-epitaxy growth and properties of InN and related alloys. .Inn. J. Appl. Phys. 42, 2549 (2003).
S.D. Luo, W.Y. Zhou, Z.X. Zhang, L.F. Liu, X.Y. Dou, J.X. Wang, X.W. Zhao, D.F. Liu, Y. Gao, L. Song, Y.J. Xiang, J.J. Zhou, and S.S. Xie: Synthesis of long indium nitride nanowires with uniform diameters in large quantities. Small 1, 1004 (2005).
S.D. Luo, W.Y. Zhou, Z.X. Zhang, X.Y. Dou, L.F. Liu, X.W. Zhao, D.F. Liu, L. Song, Y.J. Xiang, J.J. Zhou, and S.S. Xie: Bulk-quantity synthesis of single-crystalline indium nitride nanobelts. Chem. Phys. Lett. 411, 361 (2005).
S.D. Luo, L.D. Yao, W.G. Chu, J. Shen, Z.X. Zhang, J.B. Li, J.H. Yi, R.C. Yu, W.Y. Zhou, and S.S. Xie: InN/In2O3 peapod nanostructures and conformal conversion templated from InN counterparts via thermal oxidation. Nanotechnoloffy 18, 235605 (2007).
S. Uehara, T. Masamoto, A. Onodera, M. Ueno, O. Shimomura, and K. Takemura: Equation of state of the rocksalt phase of III-V nitrides to 72 GPa or higher. J. Phys. Chem. Solids 58, 2093 (1997).
C.A. Arguello, D.L. Rousseau, and S.P.S. Porto: First-order Raman effect in wurtzite-type crystals. Phys. Rev. 181, 1351 (1969).
M.P. Halsall, P. Harmer, P.J. Parbrook, and S.J. Henley: Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN. Phys. Rev. B 69, 235207 (2004).
G. Kaczmarczyk, A. Kaschner, S. Reich, A. Hoffmann, C. Thomsen, D.J. As, A.P. Lima, D. Schikora, K. Lischka, R. Averbeck, and H. Riechert: Lattice dynamics of hexagonal and cubic InN: Raman-scattering experiments and calculations. Appl. Phys. Lett. 76, 2122 (2000).
M. Blackman: On the thermal expansion of solids. Proc. Phys. Soc. London, Sect. B 70, 827 (1957).
W.B. Daniels: Lattice Dynamics, edited by R.F. Wallis (Pergamon Press, Oxford, 1965), p. 273.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Yao, L.D., Luo, S.D., Shen, X. et al. Structural stability and Raman scattering of InN nanowires under high pressure. Journal of Materials Research 25, 2330–2335 (2010). https://doi.org/10.1557/jmr.2010.0290
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2010.0290