Abstract
Metalorganic chemical vapor deposition was used to grow N-rich side GaNSb alloys under different growth conditions, and, for the first time, a considerable amount of Sb was incorporated into the GaNSb. The amount of Sb increased as the growth temperature decreased, but the maximal Sb content seemed to be limited by the solid solubility of Sb in GaN. Absorption spectroscopy of the GaNSb revealed a strong absorption band below the band gap of GaN. The below-band gap absorption extended to 0.8 eV, which makes GaNSb a promising material to serve as an infrared absorption layer on GaN.
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References
K. Iwata, H. Asahi, K. Asami, R. Kuoiwa, and S. Gond: GaN-rich side of GaNAs growth by gas source molecular beam epitaxy. Jpn. J. Appl. Phys. 37, 1436 (1998).
C.T. Foxon, S.V. Novikov, T.S. Cheng, C.S. Davis, R.P. Campion, A.J. Winser, and I. Harrison: Arsenic-doped GaN grown by molecular beam epitaxy. J. Cryst. Growth 219, 327 (2000).
C.T. Foxon, I. Harrison, S.V. Novikov, T. Li, R.P. Campion, C.R. Staddon, C.S. Davis, A.J. Winser, A.P. Kovarsky, and Ja B. Ber: The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules. J. Cryst. Growth 234, 343 (2002).
C.T. Foxon, S.V. Novikov, T. Li, R.P. Campion, R.P. Campion, A.J. Winser, I. Harrison, M.J. Kappers, and C.J. Humphreys: Arsenic incorporation in GaN during growth by molecular beam epitaxy. J. Cryst. Growth 251, 510 (2003).
A. Kimura, H.F. Tang, and T.F. Kuech: Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy. J. Cryst. Growth 265, 71 (2004).
T. Takayama, M. Yuri, K. Itoh, and J.S. Harris: Theoretical predictions of unstable two phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence-force-field model. J. Appl. Phys. 90, 2358 (2001).
S. Yoshida, J. Kikawa, and Y. Itoh: Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor deposition. J. Cryst. Growth 237–239, 1037 (2002).
D.J. Chen, B. Shen, Z.X. Bi, K.X. Zhang, S.L. Gu, R. Zhang, Y. Shi, Y.D. Zheng, X.H. Sun, S.K. Wan, and Z.G. Wang: GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition. J. Cryst. Growth 255, 52 (2003).
T.D. Veal, L.F.J. Piper, S. Jollands, B.R. Bennett, P.H. Jefferson, P.A. Thomas, C.F. McConville, B.N. Murdin, L. Buckle, G.W. Smith, and T. Ashley: Band gap recuction in GaNSb alloys due to the anion mismatch. Appl. Phys. Lett. 87, 132101 (2005).
P.H. Jefferson, T.D. Veal, L.F.J. Piper, B.R. Bennett, C.F. McConville, B.N. Murdin, L. Buckle, G.W. Smith, and T. Ashley: Band anticrossing in GaNxSb1-x. Appl. Phys. Lett. 89, 111921 (2006).
L. Zhang, H.F. Tang, and T.F. Kuech: Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metal organic vapor phase epitaxy. Appl. Phys. Lett. 79, 3059 (2001).
A.A. Gokhale, T.F. Kuech, and M. Mavrikakis: Surfactant effect of Sb on GaN growth. J. Cryst. Growth 285, 146 (2005).
L. Zhang, H.F. Tang, J. Schieke, M. Mavrikakis, and T.F. Kuech: The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. J. Appl. Phys. 92, 2304 (2002).
C.W. Pei, B. Turk, J.B. Heroux, and W.I. Wang: GaN grown by molecular beam epitaxy with antimony as surfactant. J. Vac. Sci. Technol., B 19, 1426 (2001).
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Moon, SH., Do, HA., Park, J. et al. Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition. Journal of Materials Research 24, 3569–3572 (2009). https://doi.org/10.1557/jmr.2009.0435
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DOI: https://doi.org/10.1557/jmr.2009.0435