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The temperature-dependent luminescence properties of BaAl2−xSixO4−xNx:Eu2+ and its application in yellowish-green light emitting diode

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Abstract

The influences of (SiN)+ and Eu2+ concentration on the optical properties of BaAl2−xSixO4−xNx:Eu2+ were investigated. The lifetime results show that there are two different cation sites occupied by Eu2+ ions and the energy transfer occurs between them. The Huang–Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forward-bias current of 20 mA was successfully fabricated on the basis of a structure consisting of BaAl2−xSixO4−xNx:Eu2+ phosphor and near-ultraviolet (∼395 nm) GaN chip.

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Authors and Affiliations

  1. Ministry of Education Laboratory of Bioinorganic and Synthetic Chemistry, State Key Laboratory of Optoelectronic Materials and Technologies, School of Chemistry and Chemical Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, People’s Republic of China

    Mei Zhang, Baohong Li, Jing Wang, Zhiyang Zhang, Qiuhong Zhang & Qiang Su

  2. Institute of Functional Materials, Wuyi University, Jiangmen, Guangdong, 529020, People’s Republic of China

    Mei Zhang

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  1. Mei Zhang
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  2. Baohong Li
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  3. Jing Wang
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  4. Zhiyang Zhang
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Correspondence to Jing Wang.

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Zhang, M., Li, B., Wang, J. et al. The temperature-dependent luminescence properties of BaAl2−xSixO4−xNx:Eu2+ and its application in yellowish-green light emitting diode. Journal of Materials Research 24, 2589–2595 (2009). https://doi.org/10.1557/jmr.2009.0325

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  • DOI: https://doi.org/10.1557/jmr.2009.0325

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