Abstract
We investigated the epitaxial growth of CoSi2 (100) on an Si (100) substrate using a modified oxide mediated epitaxy (OME) method to overcome the disadvantages of the OME method. These disadvantages are sensitivity of Co films to contamination by oxygen and the need for reiterating the film growth process to obtain thicker films. To solve these problems, nitrogen atoms were incorporated into chemically grown oxide (SiOx) by NH3 plasma treatment prior to the deposition of a Co film on the oxynitride buffer layer using the metal organic chemical vapor deposition (MOCVD) method. Subsequently, ex situ rapid thermal annealing was performed to grow Co-silicide at a temperature between 400 °C and 700 °C for 1 min. The results show that the diffusion of Co was effectively controlled by the oxynitride buffer layer without the formation of additional SiOx in between Co and Si. Our findings indicate that by using an oxynitride buffer layer, CoSi2 films can be grown epitaxially despite the fact that the initial Co film was exposed to oxygen.
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References
S.P. Muraka: Silicide thin films and their applications in microelectronics. Intermetallics 3, 173 (1995).
Y. Taur and T.H. Ning: Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998), p. 243.
J.P. Gamnino and E.G. Colgan: Silicides and ohmic contacts. Mater. Chem. Phys. 52, 99 (1998).
R. Pretorius and J.W. Mayer: Silicide formation by concentration controlled phase selection.J. Appl. Phys. 81, 2448 (1997).
Y. Kwon and C. Lee: Comparison of epitaxial growth of CoSi2 among Co/Ti, Co/Hf, and Co/Nb bilayers on (100) Si. Thin Solid Films 380, 127 (2000).
S. Hashimoto, K. Egashira, T. Tanaka, R. Etoh, and Y. Hata: Epitaxial silicide formation on recoil-implanted substrates. J. Appl. Phys. 97, 024911 (2005).
C. Fitz, M. Goldbach, A. Dupont, and S. Schmidbauer: Silicides as contact material for DRAM applications. Microelectron. Eng. 82, 460 (2005).
A. Vantomme, M A. Nicolet, and N.D. Theodore: Epitaxial CoSi2 films on Si(100) by solid-phase reaction. J. Appl. Phys. 75, 3882 (1994).
E.C. Jones, N.W. Cheung, and D.B. Fraser: Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi2. J. Electron. Mater. 24, 863 (1995).
G.B. Kim, J.S. Kwak, H.K. Baik, and S. Man Lee: Effect of Ti-capping thickness on the formation of an oxide-interlayermediated-epitaxial CoSi2 film by ex situ annealing. J. Appl. Phys. 85, 1503 (1999).
J.F. Liu, J.Y. Feng, and J. Zhu: Growth of epitaxial CoSi2 films on Si (100) substrates through direct solid phase reaction between crystalline Co films and Si substrates. J. Cryst. Growth 218, 272 (2000).
J.R. Jimenez, L.J. Schowalter, L.M. Hsiung, K. Rajan, S. Hashimoto, R.D. Thomson, and S.S. Iyer: Growth of CoSi2 on Si (001): Structure, defects, and resistivity. J. Vac. Sci. Technol. A. 8, 3014 (1990).
C.W.T. Bulle Lieuwma, A.H. van Ommen, J. Hornstra, and N.A.M. Aussems: Observation and analysis of epitaxial growth of CoSi2 on (100) Si. J. Appl. Phys. 71, 2211 (1992).
C. Detavernier, R.L. Van Meirhaeghe, F. Cardon, R.A. Donaton, and K. Maex: CoSi2 formation in the presence of interfacial silicon oxide. Appl. Phys. Lett. 74, 2930 (1999).
M. Lawrence, A. Dass, D.B. Fraser, and C S. Wei: Growth of epitaxial CoSi2 on (100) Si. Appl. Phys. Lett. 58, 1308 (1991).
R.K.K. Chong, M. Yeadon, W.K. Choi, E.A. Stach, and C.B. Boothroyd: Nitride-mediated epitaxy of CoSi2 on Si(001). Appl. Phys. Lett. 82, 1833 (2003).
R.T. Tung: Oxide mediated epitaxy of CoSi2 on silicon. Appl. Phys. Lett. 68, 3461 (1996).
J.S. Byun, J.M. Seon, J.W. Park, H. Hwang, and J.J. Kim: Defect generation during epitaxial growth of CoSi2 on miniature sized (100) Si substrate and its effect on electrical properties, in Silicide Thin Films—Fabrication, Properties, and Applications, edited by R.T. Tung, K. Maex, P.W. Pellegrini, and L.H. Allen (Mater. Res. Soc. Symp. Proc. 402, Warrendale, PA, 1996), p. 167.
C. Detavernier, R.L. Van Meirhaeghe, F. Cardon, and K. Maex: CoSi2 formation through SiO2. Thin Solid Films 386, 19 (2001).
S. Ohmi and R.T. Tung: Oxide mediated epitaxial growth of CoSi2 in a single deposition step, in Advanced Interconnects and Contacts, edited by D.C. Edelstein, T. Kikkawa, M.C. Öztürk, KN. Tu, and E.J. Weitzman (Mater. Res. Soc. Symp. Proc. 564, Warrendale, PA, 1999), p. 117.
M. Uematsu, H. Kageshima, and K. Shiraishi: Effect of nitrogen on diffusion in silicon oxynitride. Jpn. J. Appl. Phys. 44, 7756 (2005).
H.C. Lu, E.P. Gustafsson, and E. Garfunkel: Effect of nearinterfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides. J. Appl. Phys. 81, 6992 (1997).
A. Ishizaka and Y. Shiraki: Low temperautre surface cleaning of silicon and its application to silicon MBE. J. Electrochem. Soc. 133, 666 (1986).
R. Stadler, R. Podloucky, G. Kresse, and J. Hafner: Ab initio studies of the (100), (110), and (111) surfaces of CoSi2. Phys. Rev. B 57, 4088 (1998).
S.L. Hsia, T.Y. Tan, P. Smith, and G.E. McGuire: Formation of epitaxial CoSi2 films on (001) silicon using Ti-Co alloy and bimetal source materials. J. Appl. Phys. 70, 7579 (1991).
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Lee, J., Lee, K., Kim, D. et al. Epitaxial CoSi2 formation using an oxynitride buffer layer. Journal of Materials Research 24, 2705–2710 (2009). https://doi.org/10.1557/jmr.2009.0320
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DOI: https://doi.org/10.1557/jmr.2009.0320