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Study of Ru barrier failure in the Cu/Ru/Si system

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Abstract

The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.

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References

  1. International Technology Roadmap for Semiconductors-2004 Updates, Sematech Austin, TX http://www.itrs.net/Common/2004Update/2004_08_Interconnect.pdf accessed April 20, 2007

  2. P.C. Andricacos, C. Uzoh, J.O. Dukovic, J. Horkans H. Deligianni: Damascene copper electroplating for chip interconnections. Electrochem. Microfabrication 42, 5 1998

    Google Scholar 

  3. R. Chan, T.N. Arunagiri, Y. Zhang, O. Chyan, R.M. Wallace, M.J. Kim T.Q. Hurdc: Diffusion studies of copper on ruthenium thin film. Electrochem. Solid-State Lett. 7, G154 2004

    Article  CAS  Google Scholar 

  4. M.W. Lane, C.E. Murray, F.R. McFeely, P.M. Vereecken R. Rosenberg: Liner materials for direct electrodeposition of Cu. Appl. Phys. Lett. 83, 12 2003

    Article  Google Scholar 

  5. T.B. Massalski: Cu-Ru phase diagram, in Binary Alloy Phase Diagrams 2nd ed. edited by T.B. Massalki and H. Okamoto (American Society of Metals, Materials Park, OH, 1990), p. 1467

    Google Scholar 

  6. Y. Zhang, L. Huang, T.N. Arunagiri, O. Oieda, S. Flores, O. Chyan R.M. Wallace: Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface. Electrochem. Solid-State Lett. 7, C107 2004

    Article  CAS  Google Scholar 

  7. D. Josell, D. Wheeler, C. Witt T.P. Moffat: Seedless superfill: Copper electrodeposition in trenches with ruthenium barriers. Electrochem. Solid-State Lett. 6, C143 2003

    Article  CAS  Google Scholar 

  8. O. Chyan, T.N. Arunagiri T. Panuswamy: Electrodeposition of copper thin film on ruthenium: A potential diffusion barrier for Cu interconnects. J. Electrochem. Soc. 150, C347 2003

    Article  CAS  Google Scholar 

  9. M. Damayanti, T. Sritharan, Z.H. Gan, S.G. Mhaisalkar, N. Jiang L. Chan: Ruthenium barrier/seed layer for Cu/low-κ metallization: Crystallographic texture, roughness, diffusion and adhesion. J. Electrochem. Soc. 153, J41 2006

    Article  CAS  Google Scholar 

  10. M. Damayanti, T. Sritharan, Z.H. Gan S.G. Mhaisalkar: Effects of dissolved nitrogen in improving barrier properties of ruthenium. Appl. Phys. Lett. 88, 1 2006

    Article  Google Scholar 

  11. JCPDS No. 04-0836. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981

  12. R.R. Chromik, W.K. Neils E.J. Cotts: Thermodynamic and kinetic study of solid state reactions in the Cu–Si system. J. Appl. Phys. 86, 4273 1999

    Article  CAS  Google Scholar 

  13. JCPDS No. 23-0224. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981

  14. A.A. Istratova E.R. Weber: Physics of copper in silicon. J. Electrochem. Soc. 149, G21 2002

    Article  Google Scholar 

  15. B.S. Suh, Y.J. Lee, J.S. Hwang C.O. Park: Properties of reactively sputtered WNx as Cu diffusion barrier. Thin Solid Films 348, 299 1999

    Article  CAS  Google Scholar 

  16. C. Cabral Jr., C. Lavoie, J.M.E. Harper J. Jordan-Sweet: The use of in situ x-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structures. Thin Solid Films 397, 194 2001

    Article  CAS  Google Scholar 

  17. JCPDS No. 06-0663. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981

  18. JCPDS No. 32-0978. International Center for Diffraction Data American Ceramic Society, Swarthmore, PA, 1981

  19. C.S. Peterson, J.E.E. Baglin, J.J. Dempsey, F.M.D. Huerle S. La Placa: Silicides of ruthenium and osmium: Thin film reactions, diffusion, nucleation, and stability. J. Appl. Phys. 53, 4866 1982

    Article  Google Scholar 

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Authors and Affiliations

  1. School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore

    M. Damayanti, T. Sritharan, S. G. Mhaisalkar & E. Phoon

  2. Chartered Semiconductor Manufacturing Ltd., Woodlands Industrial Park D, Singapore, 738406, Singapore

    M. Damayanti & L. Chan

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  1. M. Damayanti
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  2. T. Sritharan
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  3. S. G. Mhaisalkar
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  4. E. Phoon
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  5. L. Chan
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Correspondence to M. Damayanti.

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Damayanti, M., Sritharan, T., Mhaisalkar, S.G. et al. Study of Ru barrier failure in the Cu/Ru/Si system. Journal of Materials Research 22, 2505–2511 (2007). https://doi.org/10.1557/jmr.2007.0310

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  • DOI: https://doi.org/10.1557/jmr.2007.0310

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