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Low-temperature growth and characterization of epitaxial ZnO nanorods by metalorganic chemical vapor deposition

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Abstract

By injecting additional argon gas, we were able to grow one-dimensional ZnO nanorod arrays with a uniform distribution on a large scale at a low temperature of less than 330 °C by metalorganic chemical vapor deposition. All of the nanorods grown on the sapphire substrate had a 30° in-plane rotation with respect to the substrate and showed the epitaxial characteristics of [10¯10]ZnO//[11¯20]sapphire, despite the low-temperature growth. These ZnO nanorods with high crystalline quality exhibited a high enhancement factor and low turn-on field value, thus having good potential to be used as a field emitter.

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Acknowledgments

This work was supported by Grant No. R01-2006-000-10027-0 from the Basic Research Program of the Korea Science & Engineering Foundation and by the Energy and Resources Technology Development Project from the Ministry of Commerce, Industry and Energy (MOCIE).

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Authors and Affiliations

  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University cJangan-gu, Suwon, Gyeonggi-do, 440-746, Korea

    Dong Chan Kim, Bo Hyun Kong, Sung-Yun Jeon, Ji-Beom Yoo & Hyung Koun Cho

  2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Yusong-gu, Daejon, 305-701, Korea

    Dong Jun Park & Jeong Yong Lee

Authors
  1. Dong Chan Kim
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  2. Bo Hyun Kong
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  3. Sung-Yun Jeon
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  4. Ji-Beom Yoo
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  5. Hyung Koun Cho
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  6. Dong Jun Park
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  7. Jeong Yong Lee
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Correspondence to Hyung Koun Cho.

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Kim, D.C., Kong, B.H., Jeon, SY. et al. Low-temperature growth and characterization of epitaxial ZnO nanorods by metalorganic chemical vapor deposition. Journal of Materials Research 22, 2032–2036 (2007). https://doi.org/10.1557/jmr.2007.0248

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  • DOI: https://doi.org/10.1557/jmr.2007.0248

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