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Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition

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Abstract

A new soluble synthetic route was developed to fabricate thin films of layered structure transition metal dichalcogendies, MoS2 and WS2. High-quality thin films of the dichalcogenides were prepared using new soluble precursors, (CH3NH3)2MS4 (M = Mo, W). The precursors were dissolved in organic solvents and spun onto substrates via both single- and multistep spin coating procedures. The thin films were formed by the thermal decomposition of the coatings under inert atmosphere. Structural, electrical, optical absorption, thermal, and transport properties of the thin films were characterized. Surface morphology of the films was analyzed by atomic force microscopy and scanning electron microscopy. Highly conductive and textured n-type MoS2 films were obtained. The measured room temperature conductivity ≈50 Ω−1 cm−1 is substantially higher than the previously reported values. The n-type WS2 films were prepared for the first time using solution-processed deposition. WS2 displays a conductivity of ≈6.7 Ω−1 cm−1 at room temperature.

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Authors and Affiliations

  1. Department of Chemistry and Chemical Biology, Rutgers University, Piscataway, New Jersey, 08854, USA

    Wooseok Ki, Xiaoying Huang & Jing Li

  2. National Renewable Energy Laboratory, Golden, Colorado, 80401, USA

    David L. Young & Yong Zhang

Authors
  1. Wooseok Ki
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  2. Xiaoying Huang
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  3. Jing Li
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  4. David L. Young
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  5. Yong Zhang
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Correspondence to Jing Li.

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Ki, W., Huang, X., Li, J. et al. Highly conductive group VI transition metal dichalcogenide films by solution-processed deposition. Journal of Materials Research 22, 1390–1395 (2007). https://doi.org/10.1557/jmr.2007.0179

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  • DOI: https://doi.org/10.1557/jmr.2007.0179

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