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Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O3 films deposited by the multi-sputtering method: Part II. Piezoelectric properties

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Abstract

Highly dense and crack-free Pb(Zr,Ti)O3 (PZT) thick films with a controlled microstructure and orientation were deposited on a platinized silicon substrate by the radio frequency magnetron sputtering method using a single oxide target. The microstructure and orientation of the films were adjusted by applying a thin (100) PZT seed layer by the sol-gel method and subsequent repeated sputtering. When a thin layer was deposited on the seed layer, the film had small grains with a columnar structure. However, as the film became thicker, it developed a large and non-columnar grain structure. Therefore, reducing the thickness of the film per deposition allowed the columnar microstructure to be maintained. The (100) orientation of the film was able to be maintained by depositing it on a (100) oriented seed layer. PZT thick films with controlled orientations and microstructures were successfully deposited up to a thickness of about 5 μm, and their ferroelectric and piezoelectric properties were characterized.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea

    Chee-Sung Park, Jae-Wung Lee, Gun-Tae Park & Hyoun-Ee Kim

  2. Department of Future Technology, Korea Institute of Machinery and Materials, Chang-Won, Gyeong-Nam, 641-831, Korea

    Jong-Jin Choi

Authors
  1. Chee-Sung Park
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  2. Jae-Wung Lee
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  3. Gun-Tae Park
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  4. Hyoun-Ee Kim
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  5. Jong-Jin Choi
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Correspondence to Hyoun-Ee Kim.

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Park, CS., Lee, JW., Park, GT. et al. Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O3 films deposited by the multi-sputtering method: Part II. Piezoelectric properties. Journal of Materials Research 22, 1373–1377 (2007). https://doi.org/10.1557/jmr.2007.0177

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  • DOI: https://doi.org/10.1557/jmr.2007.0177

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