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Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films

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Abstract

ZnO thin films have been grown by metalorganic chemical vapor deposition (MOCVD) and plasma-assisted (PA) MOCVD on c-axis-oriented sapphire (0001) and Si (001) substrates using the novel Zn(2-thenoyltrifluoroacetonate)2·N,N,N′,N′-tetramethylethylendiamine precursor. The structural, morphological, and optical properties of ZnO films have been investigated. The results show that the O2 PA growth results in highly c-axis-oriented hexagonal ZnO thin films also on cubic substrates. PA-MOCVD ZnO films have good optical properties, as inferred by the presence of a sharp and intense exciton in the dielectric function.

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Authors and Affiliations

  1. Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, UdR Bari, 70126, Bari, Italy

    Maria Losurdo, Maria M. Giangregorio, A. Sacchetti, Pio Capezzuto & Giovanni Bruno

  2. Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, I-95125, Catania, Italy

    Graziella Malandrino & Ignazio L. Fragalà

Authors
  1. Maria Losurdo
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  2. Maria M. Giangregorio
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  3. A. Sacchetti
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  4. Pio Capezzuto
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  5. Giovanni Bruno
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  6. Graziella Malandrino
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  7. Ignazio L. Fragalà
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Corresponding author

Correspondence to Maria Losurdo.

Additional information

This paper was selected as the Outstanding Meeting Paper for the 2005 MRS Fall Meeting Symposium FF Proceedings, Vol. 892.

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Losurdo, M., Giangregorio, M.M., Sacchetti, A. et al. Plasma-assisted metalorganic chemical vapor deposition growth of ZnO thin films. Journal of Materials Research 21, 1632–1637 (2006). https://doi.org/10.1557/jmr.2006.0221

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  • DOI: https://doi.org/10.1557/jmr.2006.0221

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