Skip to main content
SpringerLink
Log in

Photoluminescence investigation of CdZnTe:In single crystals annealed in CdZn vapors

  • Article
  • Published:
Journal of Materials Research Aims and scope Submit manuscript

Abstract

CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. T.E. Schlesinger, J.E. Toney, H. Yoon, E.Y. Lee, B.A. Brunett, L. Franks, R.B. James: Cadmium zinc telluride and its use as a nuclear radiation detector material. Mater. Sci. Eng. Rep. 32, 103 (2001).

    Article  Google Scholar 

  2. G. Yang, W. Jie, Q. Li, T. Wang, G. Li, H. Hua: Effects of In doping on the properties of CdZnTe single crystals. J. Cryst. Growth 283, 431 (2005).

    Article  CAS  Google Scholar 

  3. L. Yujie, M. Guoli, Z. Xiaona, J. Wanqi: The annealing of Cd1−xZnx Te in CdZn vapors. J. Electron. Mater. 31, 834 (2002).

    Article  Google Scholar 

  4. S. Sen, C.S. Liang, D.R. Rhiger, J.E. Stannard: Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality. J. Electron. Mater. 25, 1188 (1996).

    Article  CAS  Google Scholar 

  5. J.M. Francou, K. Saminadayarm, J.L. Pautrat: Shallow donors in CdTe. Phys. Rev. B 41, 12035 (1990).

    Article  CAS  Google Scholar 

  6. K. Hjelt, M. Juvonen, T. Tuomi, S. Nenonen, E.E. Eissler, M. Bavdaz: Photoluminescence of Cd1−x ZnxTe crystals grown by high-pressure Bridgman technique. Phys. Status Solidi 162, 747 (1997).

    Article  CAS  Google Scholar 

  7. V.N. Babentsov, Z.K. Vlasenko, A.I. Vlasenko, A.V. Lyubchenko: Distribution of a shallow donor impurity in a p-type CdTe wafer annealed in Cd vapors. Semiconductors 31, 441 (1997).

    Article  Google Scholar 

  8. T. Schmidt, K. Lischka, W. Zulehner: Excitation-power dependence of the near-band-edge photoluminescence of semiconductors. Phys. Rev. B 45, 8989 (1992).

    Article  CAS  Google Scholar 

  9. E. Molva, J.L. Pautrat, K. Saminadayar, G. Milchberg, N. Magnear: Acceptor states in CdTe and comparison with ZnTe. General trends. Phys. Rev. B 30, 3344 (1984).

    Article  CAS  Google Scholar 

  10. K. Suzuki, K. Inagaki, S. Seto, I. Tsubono, N. Kimura, T. Sawada, K. Imai: Acceptor defects and annealing behavior in indium doped Cd1−xZnxTe (x > 0.7). J. Cryst. Growth 159, 388 (1996).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, People’s Republic of China

    Ge Yang & Wanqi Jie

  2. Beijing Power Machinery Research Institute, Beijing, 100074, People’s Republic of China

    Qunying Zhang

Authors
  1. Ge Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Wanqi Jie
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Qunying Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Ge Yang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yang, G., Jie, W. & Zhang, Q. Photoluminescence investigation of CdZnTe:In single crystals annealed in CdZn vapors. Journal of Materials Research 21, 1807–1809 (2006). https://doi.org/10.1557/jmr.2006.0219

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/jmr.2006.0219

Search

Navigation