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Advances in the growth and characterization of Ge quantum dots and islands

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Abstract

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

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Authors and Affiliations

  1. Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada

    J. M. Baribeau & D. J. Lockwood

  2. Institute for National Measurements Standards, National Research Council Canada, Ottawa, Ontario, K1A 0R6, Canada

    N. L. Rowell

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This paper was selected as the Outstanding Meeting Paper for the 2004 MRS Fall Meeting Symposium F Proceedings, Vol. 832.

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Baribeau, J.M., Rowell, N.L. & Lockwood, D.J. Advances in the growth and characterization of Ge quantum dots and islands. Journal of Materials Research 20, 3278–3293 (2005). https://doi.org/10.1557/jmr.2005.0405

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