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Dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3–PbTiO3 epitaxial films near the morphotropic phase boundary

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Abstract

The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3–PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3–PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455 °C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e31,f was −12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e31,f ~ −12 C/m2) while the transition temperature is 100 °C higher.

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Authors and Affiliations

  1. Materials Research Institute, The Pennsylvania State University, 16802, University Park, Pennsylvania, USA

    Juan C. Nino & Susan Trolier-McKinstry

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  1. Juan C. Nino
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  2. Susan Trolier-McKinstry
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Nino, J.C., Trolier-McKinstry, S. Dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3–PbTiO3 epitaxial films near the morphotropic phase boundary. Journal of Materials Research 19, 568–572 (2004). https://doi.org/10.1557/jmr.2004.19.2.568

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  • DOI: https://doi.org/10.1557/jmr.2004.19.2.568

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