Abstract
Graphene specimens produced by chemical vapor deposition usually show p-type characteristics and significant hysteresis in ambient conditions. Among many methods, current annealing appears to be a better way of cleaning the sample due to the possibility of in-situ annealing in the measurement setup. However, long-time current annealing could increase defects in the underlying substrate. Studying the hysteresis with different anneal currents in a graphene device is, therefore, a topic of interest. In this experimental work, we investigate electron/hole transport in a graphene sample in the form of a Hall bar device with a back gate, where the graphene was prepared using chemical vapor deposition on copper foils. We study the hysteresis before and after current annealing the sample by cooling down to a temperature of 35 Kfrom room temperature with a back-gate bias in a closed cycle refrigerator.
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Wijewardena, U.K., Nanayakkara, T., Samaraweera, R. et al. Effects of Long-Time Current Annealing to the Hysteresis in CVD Graphene on SiO2. MRS Advances 4, 3319–3326 (2019). https://doi.org/10.1557/adv.2019.366
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DOI: https://doi.org/10.1557/adv.2019.366