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Tin Disulfide-Oxide (SnS2-xOx) as n-type Heterojunction Layer Processed by Chemical Bath Technique for Cd Free Fabrication of Compound Semiconductor Thin Film Solar Cells

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Abstract

The chemical bath deposition of wide bandgap n-type SnS2 films and role of sulphur precursor in suppression of p-type SnS phase is described. The as-deposited films are highly polycrystalline in hexagonal crystal structure. Inclusion of oxygen in the film phase is shown by the x-ray photoelectron spectroscopy (XPS) and Raman scattering methods which suggests the CBD films are better described as tin disulfide-oxide (SnS2-xOx) x=0.1. A possible mechanism of film formation is presented. Optical analysis showed energy bandgap 2.76 eV for SnS2-xOx film which decreases to 2.62 eV with the inclusion of the secondary SnS phases.

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Authors and Affiliations

  1. Electrical and Computer Engineering Department, Binghamton University, SUNY, Binghamton, NY, 13902, USA

    Omar Asif & Alok C. Rastogi

  2. Center for Autonomous Solar Power (CASP), Binghamton University, SUNY, Binghamton, NY, 13902, USA

    Omar Asif & Alok C. Rastogi

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  1. Omar Asif
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  2. Alok C. Rastogi
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Asif, O., Rastogi, A.C. Tin Disulfide-Oxide (SnS2-xOx) as n-type Heterojunction Layer Processed by Chemical Bath Technique for Cd Free Fabrication of Compound Semiconductor Thin Film Solar Cells. MRS Advances 3, 3301–3306 (2018). https://doi.org/10.1557/adv.2018.523

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  • DOI: https://doi.org/10.1557/adv.2018.523

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