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Low Temperature Photoluminescence Spectroscopy of Defect and Interband Transitions in CdSexTe1-x Thin Films

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Abstract

We present the defect analysis by photoluminescence (PL) spectroscopy of CdSexTe1-x thin films, grown with varying Se content by a co-sputtered deposition method. We observe a peak at 1.203 eV in the CdSexTe1-x film for x = 0.21, which shifts towards higher energies with increase in laser power. This peak was assigned to a donor-to-acceptor (DAP) transition, with a measured j-shift of ~4.7 meV/decade. Temperature dependent PL intensity measurements confirm that the observed DAP peak involves a shallow defect state of binding energy ~34.7 meV. In contrast, a free-to-bound (FB) peak at 1.294 eV involving a shallow defect of binding energy ~18.3 meV was observed in the CdSexTe1-x film for x = 0.14. Additionally, we observe band edge emission at 1.452 eV and 1.448 eV in CdSexTe1-x films for x = 0.14 and x = 0.21 respectively. Our analysis shows that the Se concentration not only changes the band gap energy of the resulting CdSexTe1-x alloy thin film, but also modifies the nature of the dominant observed defect emission.

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References

  1. N. R. Paudel, J. D. Poplawsky, K. L. Moore and Y. Yan, IEEE J. Photovolt. 5 (5), 1492–1496 (2015).

    Article  Google Scholar 

  2. N. R. Paudel and Y. Yan, Appl. Phys. Lett. 105 (18), 183510 (2014).

    Article  Google Scholar 

  3. J. D. Poplawsky, W. Guo, N. Paudel, A. Ng, K. More, D. Leonard and Y. Yan, Nat. Commun. 7, 12537 (2016).

    Article  CAS  Google Scholar 

  4. D. Josell, R. Debnath, J. Y. Ha, J. Guyer, M. A. Sahiner, C. J. Reehil, W. A. Manners and N. V. Nguyen, ACS Appl. Mater. Interfaces 6 (18), 15972–15979 (2014).

    Article  CAS  Google Scholar 

  5. D. U. Kim, C. M. Hangarter, R. Debnath, J. Y. Ha, C. R. Beauchamp, M. D. Widstrom, J. E. Guyer, N. Nguyen, B. Y. Yoo and D. Josell, Sol. Energy Mater. Sol. Cells 109, 246–253 (2013).

    Article  CAS  Google Scholar 

  6. J. Ma and S.-H. Wei, Phys. Rev. B 87 (24), 241201 (2013).

    Article  Google Scholar 

  7. T. Nacir, M. O. Ihab and A. Hussain, J. Phys.: Condens. Matter 21 (7), 075802 (2009).

    Google Scholar 

  8. S.-H. Wei, S. B. Zhang and A. Zunger, J. Appl. Phys. 87 (3), 1304–1311 (2000).

    Article  CAS  Google Scholar 

  9. N. R. Paudel, C. R. Grice, C. Xiao and Y. Yan, Journal of Applied Physics 116 (4), 044506 (2014).

    Article  Google Scholar 

  10. J. Krustok, J. Mädasson and J. Hiie, Phys. Status Solidi A 165 (2), 517–525 (1998).

    CAS  Google Scholar 

  11. J. Krustok, V. Valdna, K. Hjelt and H. Collan, J. Appl. Phys. 80 (3), 1757–1762 (1996).

    Article  CAS  Google Scholar 

  12. K. J. Price, D. Grecu, D. Shvydka and A. D. Compaan, presented at the Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000 (unpublished).

  13. A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra and N. D. Vakhnyak, Semiconductors 39 (7), 754–758 (2005).

    Article  CAS  Google Scholar 

  14. J. Van Gheluwe, J. Versluys, D. Poelman and P. Clauws, Thin Solid Films 480, 264–268 (2005).

    Article  Google Scholar 

  15. P. Fernández, J. Optoelectron. Adv. Mater. 5, 20 (2003).

    Google Scholar 

  16. T. Schmidt, G. Daniel and K. Lischka, J. Cryst. Growth 117 (1), 748–752 (1992).

    Article  CAS  Google Scholar 

  17. P. J. Roland, N. R. Paudel, X. Chuanxiao, Y. Yan and R. J. Ellingson, presented at the 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014 (unpublished).

  18. M. C. Peter YU, Fundamentals of Semiconductors, Physics and Materials Properties, 4 ed. (Springer-Verlag Berlin Heidelberg, 2010).

  19. D. G. Thomas, J. J. Hopfield and W. M. Augustyniak, Physical Review 140 (1A), A202–A220 (1965).

    Article  Google Scholar 

  20. M. Gustavo, P. G. Sánchez and R. Carlos, physica status solidi (b) 254 (11), 1700332 (2017).

    Google Scholar 

  21. D. P. Halliday, M. D. G. Potter, J. T. Mullins and A. W. Brinkman, J. Cryst. Growth 220 (1), 30–38 (2000).

    CAS  Google Scholar 

  22. D. Kuciauskas, P. Dippo, Z. Zhao, L. Cheng, A. Kanevce, W. K. Metzger and M. Gloeckler, IEEE J. Photovolt. 6 (1), 313–318 (2016).

    Article  Google Scholar 

  23. J. Krustok, H. Collan and K. Hjelt, J. Appl. Phys. 81 (3), 1442–1445 (1997).

    Article  CAS  Google Scholar 

  24. J. Krustok, A. Jagomägi, J. Raudoja and M. Altosaar, Sol. Energy Mater. Sol. Cells 79 (3), 401–408 (2003).

    Article  CAS  Google Scholar 

  25. J. Krustok, J. Raudoja, J. H. Schön, M. Yakushev and H. Collan, Thin Solid Films 361–362, 406–410 (2000).

    Article  Google Scholar 

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Shrestha, N., Grice, C.R., Bastola, E. et al. Low Temperature Photoluminescence Spectroscopy of Defect and Interband Transitions in CdSexTe1-x Thin Films. MRS Advances 3, 3293–3299 (2018). https://doi.org/10.1557/adv.2018.516

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  • DOI: https://doi.org/10.1557/adv.2018.516

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