Abstract
In order to collect the hot electrons, light trapping using cylindrical quartz substrates for ultra-thin a-Si:H photovoltaic cells with no doped layers is introduced. The photovoltaic cell has the structure of 2 nm MoOx (hole collection layer) – 10 nm intrinsic a-Si:H (photoactive layer) – 1.5 nm LiF / 300 nm Al (electron collection layer and back electrode), all deposited in that order onto a cylindrical quartz substrate covered with a 100 nm ITO layer, which is acting as the transparent front electrode for the cell. By rotating the cell with respect to the incoming light, the angle of incidence of the incoming light for which the cell efficiency is at its highest value, is determined.
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Ore, E., Amaratunga, G. Cylindrical Ultra-Thin a-Si:H Photovoltaic Cell With No Doped Layers. MRS Advances 2, 825–833 (2017). https://doi.org/10.1557/adv.2017.224
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DOI: https://doi.org/10.1557/adv.2017.224