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Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates

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Abstract

Integrating oxide heterostructures on silicon has the potential to leverage the multifunctionalities of oxide systems into semiconductor device technology. We present the growth and characterization of two-dimensional electron gas (2DEG) oxide systems LaTiO3/SrTiO3 (LTO/STO) and GdTiO3/SrTiO3 (GTO/STO) on Si(001). We show interface-based conductivity in the oxide films and measure high electron densities ranging from ~9 x 1013 cm-2 interface-1 in GTO/STO/Si to ~9 x 1014 cm-2 interface-1 in LTO/STO/Si. We attribute the higher measured carrier density in the LTO/STO films to a higher concentration of interface-bound oxygen vacancies arising from a lower oxygen partial pressure during growth. These vacancies donate conduction electrons and result in an increased measured carrier density. The integration of such 2DEG oxide systems with silicon provides a bridge between the diverse electronic properties of oxide systems and the established semiconductor platform and points toward new devices and functionalities.

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    Authors and Affiliations

    1. Center for Research on Interface Structures and Phenomena and Department of Applied Physics, Yale University, New Haven, Connecticut, 06511, USA

      Eric N. Jin, Lior Kornblum, Charles H. Ahn & Frederick J. Walker

    2. Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut, 06511, USA

      Charles H. Ahn

    Authors
    1. Eric N. Jin
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    2. Lior Kornblum
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    3. Charles H. Ahn
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    4. Frederick J. Walker
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    Correspondence to Eric N. Jin.

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    Eric N. Jin and Lior Kornblum contributed equally to this work.

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    Jin, E.N., Kornblum, L., Ahn, C.H. et al. Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates. MRS Advances 1, 287–292 (2016). https://doi.org/10.1557/adv.2016.95

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