Abstract
We have demonstrated the NiO/ZnO based rectifying diode for LED application for substituting GaN for optoelectronics applications. We have systematically studied the current-voltage (I-V) characteristics of NiO based Metal-Insulator-Semiconductor (MIS) devices under forward and reverse bias for its use in LED applications. The results obtained show that the current increases exponentially with the voltage after a critical turn-on-voltage. The mechanism of carrier transport responsible for the rectifying behavior of the MIS structure as well as the light emission is discussed in relation to the experimental results.
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Khan, K., Itapu, S. & Georgiev, D.G. Rectifying Behavior and Light Emission from Nickel Oxide MIS Structures. MRS Advances 1, 3341–3347 (2016). https://doi.org/10.1557/adv.2016.564
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DOI: https://doi.org/10.1557/adv.2016.564