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Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

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Abstract

Bi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, NC, 27695-7906, USA

    Adele Moatti, Srinivasa Rao Singamaneni & Jagdish Narayan

  2. Intel Corporation, RA3, Hillsboro, OR, 97124, USA

    Reza Bayati

Authors
  1. Adele Moatti
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  2. Reza Bayati
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  3. Srinivasa Rao Singamaneni
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  4. Jagdish Narayan
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Moatti, A., Bayati, R., Singamaneni, S.R. et al. Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates. MRS Advances 1, 2635–2640 (2016). https://doi.org/10.1557/adv.2016.544

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