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Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

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Abstract

Epitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[110]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (~50 µm) with small angle grain boundaries (< 8º). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

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Authors and Affiliations

  1. Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180-3950, USA

    L. Chen, Z. -H. Lu, T. M. Lu, S. B. Zhang & G. -C. Wang

  2. Electrical, Computer and Systems Engineering Department, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180-3950, USA

    I. Bhat

  3. TapeSolar Inc. and U. at Buffalo, Research and education in eNergy, Environment, and Water (RENEW) Institute, Buffalo, NY, 14260, USA

    A. Goyal

  4. Brookhaven National Lab, Center for Functional Nanomaterials, Upton, NY, 11973, USA

    L. H. Zhang & K. Kisslinger

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  1. L. Chen
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  2. Z. -H. Lu
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  3. T. M. Lu
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  4. I. Bhat
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Chen, L., Lu, Z.H., Lu, T.M. et al. Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer. MRS Advances 1, 2947–2952 (2016). https://doi.org/10.1557/adv.2016.517

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  • DOI: https://doi.org/10.1557/adv.2016.517

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