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Electroluminescence Enhancement via Grating on a Si-based Plasmonic Metal-Insulator-Semiconductor Tunnel Junction

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Abstract

Here we fabricated and characterized a CMOS compatible metal-insulator-semiconductor (MIS) plasmonic tunnel junction for Si-based photonic circuitry. A grating structure was realized on MIS plasmonic tunnel junction via focused-ion-beam milling (FIB) to increase the intensity of the light emission that occurs during inelastic electron tunneling. Approximately 65 times higher intensity of light emission is achieved with the grating structure during the measurements.

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Authors and Affiliations

  1. Electrical and Computer Engineering, The George Washington University, 2121 I St. NW, Washington, 20052, DC

    Hasan Goktas & Volker J. Sorger

Authors
  1. Hasan Goktas
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  2. Volker J. Sorger
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Goktas, H., Sorger, V.J. Electroluminescence Enhancement via Grating on a Si-based Plasmonic Metal-Insulator-Semiconductor Tunnel Junction. MRS Advances 1, 1709–1713 (2016). https://doi.org/10.1557/adv.2016.2

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  • DOI: https://doi.org/10.1557/adv.2016.2

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