Abstract
The kinetics of Ge lateral overgrowth on SiO2 with line-shaped Si seeds is examined. The growth process is described by the difference between the growth rates of Ge on (100) planes (GR100) and <311> facets (GR311). The theoretical calculations well reproduce the growth kinetics. It is shown that narrowing the line-seeds helps Ge coalescence and flat film formation.
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Y. Mizuno, Master thesis, The University of Tokyo, Japan (2014).
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Yako, M., Kawai, N., Mizuno, Y. et al. The kinetics of Ge lateral overgrowth on SiO2. MRS Advances 1, 1703–1708 (2016). https://doi.org/10.1557/adv.2015.38
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DOI: https://doi.org/10.1557/adv.2015.38