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Fundamentals of X-Ray Photoemission Spectroscopy

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Abstract

Rapid progress in the development of new electronic materials and the steady maturation of silicon-based technologies has resulted in a host of novel electronic devices in which the active region of the structure is confined to an interface or a surface. The chemical, electronic, and physical characterization of surfaces and interfaces in semiconductors and insulators is of critical importance to manufacturing process control as well as to the fundamental electron physics and materials science which support microelectronic device research.

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Grunthaner, F.J. Fundamentals of X-Ray Photoemission Spectroscopy. MRS Bulletin 12, 60–64 (1987). https://doi.org/10.1557/S0883769400067245

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