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References
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See, for example, P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, and J.M. Poate, in 10th International Conference on Ion Implantation Technology (Catania, 1994).
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See, for example, D.C. Jacobson, A. Kamgar, D.J. Eaglesham, E.J. Lloyd, S.J. Hillenius, and J.M. Poate, in 10th International Conference on Ion Implantation Technology (Catania, 1994).
See, for example, D.J. Eaglesham, H.-J. Gossmann, and M. Cerullo, Phys. Rev. Lett. 65 (1990).
See, for example, D.J. Eaglesham, J. Appl. Phys. (1994).
Additional information
Dave Eaglesham is a member of the technical staff at AT‖T Bell Laboratories, Murray Hill, New Jersey. He earned his BSc degree in chemical physics and his PhD degree in physics at the University of Bristol, England, and served as a tenured professor in materials science at the University of Liverpool. With more than 100 publications to his name, Eaglesham is recognized for his innovative work combining transmission electron microscopy and molecular beam epitaxy to understand low-temperature silicon epitaxy and other phenomena involving surface energies and crystal growth.
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Eaglesham, D.J. What We Still Don’t Know About Silicon. MRS Bulletin 19, 57–60 (1994). https://doi.org/10.1557/S0883769400048739
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DOI: https://doi.org/10.1557/S0883769400048739