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Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon

  • Ion-Assisted Processing of Electronic Materials
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Summary

Compound formation using ion implantation and annealing is a powerful technique for forming multilayer structures. Some of the important material parameters for coalescence of an oxide or silicide layer include: adequate total implant concentration to achieve a threshold peak concentration, stability during hightemperature annealing, and, for the silicides, lattice structure matching with Si. Although many methods exist for making buried oxide layers in silicon, the implantation process is the most compatible with conventional Si processing. Devices made in SIMOX wafers show greater radiation hardness, higher speeds, increased latchup immunity, and reduced short channel effects compared to bulk devices. The silicide layers formed by mesotaxy are single crystal, aligned with the substrate, and have very desirable electrical characteristics. Although the field is less well developed than SIMOX, the metal layers have already been used in prototype devices.

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  1. G. K. Celler
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  2. Alice E. White
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Celler, G.K., White, A.E. Buried Oxide and Silicide Formation by High-Dose Implantation in Silicon. MRS Bulletin 17, 40–46 (1992). https://doi.org/10.1557/S0883769400041452

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