Summary
Although the ion implantation process has been widely used in silicon device manufacturing for two decades, there are major challenges for the future in each of the three coupled arenas that we have discussed. Our understanding of physical phenomena is not sufficiently complete, the demands for specific applications continually increase and the performance, reliability and cost of manufacturing machines are business imperatives.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R.J. Schreutelkamp, Mater. Sci. Rep. 6 (7,8) (1991).
R. Simonton and F. Sinclair, Emerging Ion Implantation Processes for the 1990’s, Advanced Ion Implantation Survey Report, Eaton Corporation Report No. 8500208 (1990).
Y. Akasaka, NIMB37/38 (North Holland, 1989) p. 9.
K.H. Kusters et al., NIMB55 (North Holland, 1991) p. 9.
C. Hill and P. Hunt, NIMB55 (North Holland, 1991) p. 1.
W.K. Hofker, Philips Res. Rep., Supp., No. 8 (1975).
K.M. Klein et al., J. Electrochem. Soc. 138 (7) (1991) p. 2102.
Ning Yu et al., NIM B59/60 (1991) p. 1061.
C. Park, K.M. Klein, A.F. Tasch, R.B. Simonton, and G. Lux, Tech. Digest, IEDM’ 91, Washington, DC, (December, 1991).
R.G. Wilson, J. Appl. Phys. 60 (8) (Oct. 1986) p. 2797; R.G. Wilson, J. Appl. Phys. 52 (6) (1981) p. 3985; J. Comas and R. G. Wilson, J. Appl. Phys. 51 (7) (1980) p. 3697.
S.M. Davidson and G.R. Booker, in First International Conference on Implantation, edited by F.H. Eisen and L.T. Chadderton, (Gordon and Breech, New York, 1971); W.K. Wu and J. Washburn; J. Appl. Phys. 48 (1977) p. 3742.
D.K. Brice, L.T. Chadderton, (Gordon and Breech, New York, 1971) ibid., p. 101.
S.J. Pennycook, in Rapid Thermal Processing, edited by T.O. Sedgwick, T.E. Seidel, B.-Y. Tsaur (Mater. Res. Soc. Symp. Proc. 52, Pittsburgh, PA, 1986) p. 37.
A.E. Michel, ibid., p. 3.
R.B. Fair, Impurity Doping Processes in Silicon, edited by F. Wang (North Holland, New York, 1981) Chapter 7.
S.K. Jones, S. Prussin, and E.R. Weber, Appl. Phys. A45 (1988) p. 1.
P.A. Packan and J.D. Plummer, Appl. Phys. Lett. 56 (1990) p. 1787.
K. Maex, L. Hobbs, and W. Eichhammer, VLSI Sci. and Technol., edited by J.M. Andrews and G.K. Celler, (ECS Pennington, NJ, 1991) p. 254.
I.D. Calder and A.A. Naem, in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by D. Hodul, J. Gelpey, M.L. Green, and T.E. Seidel, (Mater. Res. Soc. Symp. Proc. 146, Pittsburgh, PA, 1989) p. 203.
Courtesy, Varian Corporation.
K.H. Kusters, H.M. Muhlhoff, and H. Cerva, NIM B55 (North Holland, 1991) p. 9.
D. Praminik et al., Solid State Technol. (May 1984) p. 211.
J. Pfiester, et al., IEEE Elec. Dev. Lett. 9 (8) (1988) p. 391.
T. Kaga et al., IEEE Elec. Dev. Lett. 35 (12) (1988) p. 2384.
P. Tsang et al., IEEE Trans. Elec. Dev., ED-29 (1982) p. 590.
J. Pfiester et al., IEDM 1987 Tech. Dig., p. 51.
T. Hori et al., IEEE Elec. Dev. Lett. 9 (6) (1988) p. 300.
J. Manoliu, Semiconductor Int. (April, 1988) p. 90.
G. Fuse et al, IEEE Trans. Elec. Dev. ED-34 (2) (1987).
L.A. Larson and B.J. Kirby, in Emerging Semiconductor Technology, edited by D.C. Gupta and P.H. Langer (ASTM STP960, ASTM, 1986) p. 119.
M.I. Current and L.A. Larson, in Advanced Applications of Ion Implantation, edited by M.I. Current and D.K. Sadana, (Mater. Res. Soc. Symp. Proc. 147, Pittsburgh, PA, 1989) p. 365.
J.H. Freeman, Radiat. Eff. 100 (1986) p. 161.
X.Y. Quin et al., NIM B55 (1991) p. 821.
Rights and permissions
About this article
Cite this article
Seidel, T.E., Larson, L.A. Status of Low-Dose Implantation for VLSI. MRS Bulletin 17, 34–39 (1992). https://doi.org/10.1557/S0883769400041440
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400041440