References
M. Bohr, in Adanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by R. Havemann, J. Schmitz, H. Komiyama, and K. Tsubouchi (Materials Research Society, Pittsburgh, 1997) p. 3.
K. Yamashita and S. Odanaka, VLSI Technol Symp. Tech. Dig. (1997) p. 53.
P. Dixit, in Proc. SEMATECH Workshop on Low Dielectric Constant Materials and Interconnects (SEMATECH, San Diego, 1996) p. 1.
S-P. Jeng, R. Havemann, and M. Chang, in Advanced Metallization for Devices and Cicuits — Science, Technology, and Manufacturability, edited by S.P. Murarka, A. Katz, K.N. Tu, and K. Maex (Mater. Res. Soc. Symp. Proc. 337, Pittsburgh, 1994) p. 25.
C. Jin, L. Ting, K. Taylor, T. Seha, and J.D. Luttmer, in Proc. Dielectrics for ULSI Multilevel Interconnection Conf. (Santa Clara, CA, 1996) p. 21.
W-Y. Shih, J. Levine, and M. Chang, in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by R. Havemann, J. Schmitz, H. Komiyama, and K. Tsubouchi (Materials Research Society, 1997) p. 479.
D.T. Price, R.J. Gutmann, and S.P. Murarka, in Proc. SEMATECH Workshop on Low Dielectric Constant Materials and Interconnects (SEMATECH, San Diego, 1996) p. 479.
J. Waeterloos, H. Meynen, B. Coenegrachts, J. Grillaert, and L. Van den hove, Ibid. p. 404.
S-P. Jeng, M-C. Chang, T. Kroger, P. Me Anally, and R.H. Havemann, VLSI Technol. Symp. Tech. Dig. (1994) p. 73.
A.K. Stamper, V. McGahay, and J.P. Hummel, in Proc. Dielectrics for ULSI Multilevel Interconnection Conf. (Santa Clara, CA, 1997) p. 13.
S. Bothra, L.Q. Qian, M. Weling, and D. Pramanik, Ibid. p. 273.
D. Tobben, D. Groteloh, and O. Spindler, Ibid. (1996) p. 29.
M.Z. Karim and D.R. Evans, Ibid. p. 63.
H. Kudo, S. Takeishi, R. Shinohara, and M. Yamada, Ibid. (1997) p. 85.
J.G. Fleming and E. Roherty-Osmun, Ibid. p. 139.
J.G. Fleming, E. Roherty-Osmun, and A.J. Farino, in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by R. Havemann, J. Schmitz, H. Komiyama, and K. Tsubouchi (Materials Research Society, Pittsburgh, 1997) p. 471.
A. Singh, G. Dixit, R.S. List, S.W. Russell, A.R.K. Ralston, D. Aldrich, W-Y. Shih, S. Nag, A.J. McKerrow, C. Jin, W. Lee, J.D. Luttmer, and R.H. Havemann, in Proc. Low and High Dielectric Constant Materials, (Electrochemical Society, Montreal, 1997).
A. Nakashima, M. Egami, M. Komatsu, Y. Ohkura, M. Miyajima, H. Harada, and S. Fukuyama, in Proc. Dielectrics for ULSI Multilevel Interconnection Conf. (Santa Clara, CA, 1997) p. 303.
M.K. Jain, S. Nag, G.A. Dixit, J.D. Luttmer, and R.H. Havemann, in Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, edited by R. Havemann, J. Schmitz, H. Komiyama, and K. Tsubouchi (Materials Research Society, Pittsburgh, 1997) p. 423.
C.B. Case, C.J. Case, A. Kornblit, M.E. Mills, D. Castillo, and R. Liu, Ibid. (1996) p. 449.
R.S. List, C. Jin, S.W. Russell, S. Yamanaka, L. Olsen, L. Le, L.M. Tang, and R.H. Havemann, VLSI Technol. Symp. Tech. Dig. (1977) p. 77.
C. Jin, R.S. List, W.W. Lee, C. Lee, J.D. Luttmer, and R.H. Havemann, in Low-Dielectric Constant Materials II, edited by K. Uram, H. Treichel, A.C. Jones, and A. Lagendijk (Mater. Res. Symp. Proc. 443, Pittsburgh, 1997).
-, in Advanced Metallization for ULSI Applications in 1996, edited by R. Havemann, J. Schmitz, H. Komiyama, and K. Tsubouchi (Materials Research Society, 1997) p. 463.
N. Oda, T. Usami, K. Kishimoto, A. Matsumoto, K. Mikagi, K. Kikuta, H. Gomi, and I. Sakai, VLSI Technol. Symp. Tech. Dig. (1997) p. 79.
A.R.K. Ralston, J.F. Gaynor, A. Singh, L.V. Le, R.H. Havemann, M.A. Piano, T. Cleary, J.C. Wing, and J. Kelly, Ibid. (1997) p. 81.
Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, and T. Horiuchi, Proc. IEEE IEDM (1996) p. 369.
G.A. Biery and C-K. Hu, Proc. SEMATECH Workshop on Low Dielectric Constant Materials and Interconnects (SEMATECH, San Diego, 1996) p. 499.
K. Yoshiyama, K. Okada, M. Igarahi, K. Yamada, S. Shimizu, Y. Takata, A. Osaki, K. Higashitani, and S. Asai, VLSI Technol. Symp. Tech. Dig. (1997) p. 55.
T.C. Holloway, G.A. Dixit, D.T. Grider, S.P. Ashburn, R. Aggarwal, A. Shih, X. Zhang, G. Musium, A.L. Esquivel, M. Jain, S. Madan, T. Breedijk, A. Singh, G. Thakar, G. Shinn, B. Riemenschneider, S. O’Brien, D. Frystak, J. Kittl, A. Amerasekera, S. Aur, A. Appel, C. Bowles, and T. Parrill, Ibid. p. 13.
K. Mizobuchi, K. Hamamoto, M. Utsugi, G.A. Dixit, S. Poarch, R.H. Havemann, C D. Dobson, A.I. Jeffryes, P.J. Holverson, Paul Rich, D.C. Butler, Nick Rimmer, and Arthur McGeow, Ibid. (1995) p. 45.
S.W. Chow, W.E. Loeb, and C.E. White, J. Appl. Polym. Sci. 13 (1969) p. 2235
Electronic Packaging Materials Science VI, edited by P.S. Ho, K.A. Jackson, C-Y. Li, and G.F. Lipscomb (Mater. Res. Soc. Symp. Proc. 264, Pittsburgh, 1992) p. 83.
J. Wary, R. Olson, and W. Beach, Semicond. Int. 19 (1996) p. 211.
J. Gaynor, J. Chen, H. Nguyen, G. Brown, K. Taylor, J.D. Luttmer, M.A. Piano, T. Cleary, J. Wing and J. Kelly, in Proc. Low and High Dielectric Constant Materials (Electrochemical Society, Montreal, 1997).
A. Harrus, J. Kelly, D. Kumar, T. Mountsier, and M.A. Piano, presented at the 52nd Symposium on Semiconductors and Integrated Circuits Technology (Electrochemial Society, Japan, June 1997).
P.K. Wu, G-R. Yang, J.F. MacDonald, and T-M. Lu, J. Electron. Mater. 24 (1995) p. 53.
A.S. Harrus, M.A. Piano, D. Kumar, and J. Kelly, in Electronic Materials and Processing, Semiconductors, Thin Films and Interfaces, edited by K. Uram, H. Treichel, A.C. Jones, and A. Lagendijk (Mater. Res. Soc. Symp. Proc. 443, Pittsburgh, 1997).
Rights and permissions
About this article
Cite this article
List, R.S., Singh, A., Ralston, A. et al. Integration of Low-k Dielectric Materials Into Sub-0.25-μm Interconnects. MRS Bulletin 22, 61–69 (1997). https://doi.org/10.1557/S0883769400034229
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400034229