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Nakamura, S. InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours. MRS Bulletin 23, 37–43 (1998). https://doi.org/10.1557/S0883769400030414
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DOI: https://doi.org/10.1557/S0883769400030414