This is a preview of subscription content, log in via an institution to check access.
References
C.A. Warwick, R-H. Yan, Y.O. Kim, and A. Ourmazd, “Toward Giga-Scale Silicon Integrated Circuits,” AT&T Tech. J. 72 (1993) p. 50.
Proc. Semiconductor Industry Assoc. Workshop (Semiconductor Industry Assoc, 1993).
P.M. Solomon, “A Comparison of Semiconductor Devices for High-Speed Logic,” Proc. IEEE 70 (1982) p. 489.
T. Sakurai, “Approximation of Wiring Delay in MOSFET LSI,” IEEE J. Solid-State Circuits SC18 (1983) p. 418.
E.A. Fitzgerald, presented at Electronic Materials Conference, Boulder, CO, June 1994.
I.N. Yassievich and L.C. Kimerling, “The Mechanisms of Electronic Excitation of Rare Earth Impurities in Semiconductors,” Semicond. Sci. Technol. 7 (1993) p. 1.
J. Michel, L.V.C. Assali, M.T. Morse, and L.C. Kimerling, “Erbium in Silicon,” Semicond. Semimetals 49 (1998) p. 111.
J. Palm, F. Can, B. Zheng, J. Michel, and L.C. Kimerling, “Electroluminescence of Erbium-Doped Silicon,” Phys. Rev. B 54 (1996) p. 603.
W.J. Miniscalco, “Erbium-Doped Glasses for Fiber Amplifiers at 1500 nm,” J. Lightwave Technol. 9 (1991) p. 234.
F. Gan, L.V.C. Assali, and L.C. Kimerling, “Electronic Structure of Erbium Centers in Silicon,” Mater. Sci. Forum 197 (1995) p. 579.
S.H. Ahn, J. Palm, B. Zheng, X. Duan, A. Agarwal, S.F. Nelson, J. Michel, and L.C. Kimerling, “Electrical Study of Crystalline Silicon Coimplanted With Erbium and Oxygen,” SPIE 3007 (1997) p. 144.
J. Palm, F. Gan, B. Zheng, J. Michel, and L.C. Kimerling, “On the Electroluminescence of Erbium Doped Silicon,” Phys. Rev. B 54 (1996) p. 17603.
B. Zheng, J. Michel, F.Y.G. Ren, D.C. Jacobson, J.M. Poate, and L.C. Kimerling, “Room Temperature Sharp Line Electroluminescence λ = 1.54 µm From an Erbium-Doped, Silicon Light-Emitting Diode,” Appl. Phys. Lett. 64 (1994) p. 2842.
J. Michel, B. Zheng, J. Palm, E. Ouellette, F. Gan, and L.C. Kimerling, in Defects in Electronic Materials II, edited by J. Michel, T. Kennedy, K. Wada, and K. Thonke (Mater. Res. Soc. Symp. Proc. 442, Pittsburgh, 1996) p. 317.
E.A. Fitzgerald, Y-H. Yie, M.L. Green, D. Brasen, A.R. Kortan, J. Michel, Y.J. Mii, and B.E. Weir, “Totally Relaxed GexSi1-x Layers With Low Threading Dislocation Densities,” Appl. Phys. Lett. 59 (1991) p. 811.
E.A. Fitzgerald, Y-H. Xie, D. Monroe, P.J. Silverman, J-M. Kuo, A.R. Kortan, F.A. Thiel, B.E. Weir, and L.C. Feldman, “Relaxed GexSi1-x, Structures for III-V Integration With Si and High Mobility Two-Dimensional Electron Gases in Si,” J. Vac. Sci. Technol. B 10 (1992) p. 1807.
M.T. Currie, S.B. Samavedam, T.A. Langdo, C.W. Leitz, and E.A. Fitzgerald, Appl. Phys. Lett, in press.
E.A. Fitzgerald, J-M. Kuo, Y-H. Xie, and P J. Silverman, “The Necessity of Ga Pre-layers in GaAs/Ge Growth Using GSMBE,” ibid. 64 (1994) p. 733.
R.M. Sieg, S.A. Ringel, S.M. Ting, and E.A. Fitzgerald, “Antiphase Domain-Free Growth of Ga As on Off-Cut 001 Ge Substrates by MBE With Suppressed Ge Out-Diffusion” (unpublished manuscript).
M. Ting, R. Sieg, S. Ringel, and E.A. Fitzgerald, J. Electron. Mater, in press.
E.A. Fitzgerald, “The Effect of Substrate Growth Area on Misfit and Threading Dislocation Densities in Mismatched Heterostructures,” J. Vac. Sci. Technol. B 7 (1989) p. 782.
D.R. Lim, S.B. thesis, 1994.
B.L. Weiss, G.T. Reed, S.K. Toh, R.A. Soref, and F. Namavar, “Optical Waveguides in SIMOX Structures,” IEEE Photonics Technol. Lett. 3 (1991) p. 19.
J. Schmidten, A. Splett, B. Schuppert, K. Petermann, and G. Burbach, “Low Loss Single Mode Optical Waveguides With Large Cross-Section in Silicon on Insulator,” Electron. Lett. 27 (1991) p. 1486.
R.M. Emmons, B.N. Kurdi, and D.G. Hall, “Buried-Oxide Silicon on Insulator Structure I. Optical Waveguide Characteristics,” IEEE J. Quantum Electron. 28 (1992) p. 1486.
A. Rickman, G.T. Reed, B.L. Weiss, and F. Namavar, “Low Loss Planar Optical Waveguides Fabricated in SIMOX Material,” IEEE Photonics Tech. Lett. 4 (1992) p. 633.
J.S. Foresi, D.R. Lim, A.M. Agarwal, and L.C. Kimerling, “Small Radius Bends and Large Angle Splitters in SOI Waveguides,” SPIE 3007 (1997) p. 112.
J.S. Foresi, P.R. Villeneuve, J. Ferrera, E.R. Theon, G. Steinmeyer, S. Fan, J.D. Joannopoulos, L.C. Kimerling, H.I. Smith, and E.P. Ippen, “Photonic-Bandgap Microcavities in Optical Waveguides,” Nature 390 (1997) p. 143.
E.A. Fitzgerald and S.B. Samavedam, “Line, Point, and Surface Defect Morphology of Graded, Relaxed GeSi Alloys on Si Substrates,” Thin Solid Films 294 (1997) p. 3.
G.P. Watson, E.A. Fitzgerald, B. Jalali, Y-H. Xie, and B.E. Weir, “Relaxed, Low Threading Defect Density Si07Geo0.3 Epitaxial Layers Grown on Si by Rapid Thermal Chemical Vapor Deposition,” J. Appl. Phys. 75 (1994) p. 263.
S.B. Samavedam and E.A. Fitzgerald, “Novel Dislocation Structure and Surface Morphology Effects in Relaxed Ge/Si-Ge(Graded)/Si Structures,” ibid. 81 (1997) p. 3108.
E.A. Fitzgerald, S. Samavedam, Y-H. Xie, and L.M. Giovane, “Influence of Strain on Semiconductor Thin Film Epitaxy,” J. Vac. Sci. Technol. A 15 1048 (1997) p. 1048.
Rights and permissions
About this article
Cite this article
Fitzgerald, E.A., Kimerling, L.C. Silicon-Based Microphotonics and Integrated Optoelectronics. MRS Bulletin 23, 39–47 (1998). https://doi.org/10.1557/S0883769400030256
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400030256