References
H.R. Haynes and H.B. Briggs, Phys. Rev. 86 (1952) p. 647
H.R. Haynes and W.C. Westphal, ibid. 101 (1956) p. 1676.
M.A. Vouk and E.C. Lightowlers, J. Phys. C 10 (1977) p. 3689.
E. Yablonovitch, D.L. Altera, C.C. Chang, T. Gmitter, and T.B. Bright, Phys. Rev. Lett. 57 (1986) p. 249.
R.T. Collins, P.M. Fauchet, and M.A. Tischler, Phys. Today 50 (1997) p. 24
P.M. Fauchet, in Light Emission in Silicon, edited by D.J. Lockwood, Semiconductors and Semimetals, vol. 49 (Academic Press, San Diego, CA, 1998) p. 206.
L.T. Canham, Appl. Phys. Lett. 57 (1990) p. 1046.
A. Richter, P. Steiner, F. Kozlowski, and W. Lang, IEEE Electron Device Lett. 12 (1991) p. 691
N. Koshida and H. Koyama, Appl. Phys. Lett. 60 (1992) p. 347
A. Bsiesy, F. Miller, M. Ligeon, F. Gaspard, R. Herino, R. Romenstain, and J.C. Vial, Phys. Rev. Lett. 71 (1993) p. 637.
M.A. Tischler, R.T. Collins, J.H. Stathis, and J.C. Tsang, Appl. Phys. Lett. 60 (1992) p. 639.
For example, see Light Emission From Silicon, edited by S.S. Iyer, R.T. Collins, and L.T. Canham (Mater. Res. Soc. Symp. Proc. 256, Pittsburgh, 1992)
Microcrystalline Semiconductors: Materials Science and Devices, edited by P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu, and Y. Aoyagi (Mater. Res. Soc. Symp. Proc. 283, Pittsburgh, 1993)
Microcrystalline and Nanocrystalline Semiconductors, edited by R.W. Collins, C.C. Tsai, M. Hirose, F. Koch, and L. Brus (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, 1995)
Advanced Luminescent Materials, edited by D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck (The Electrochemical Society, Pennington, NJ, 1996)
Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by R.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada, and A.P. Alivisatos (Mater. Res. Soc. Symp. Proc. 452, Pittsburgh, 1997).
Very popular definition of porous silicon.
A. Loni, A.J. Simons, T.I. Cox, P.D.J. Calcott, and L.T. Canham, Electron. Lett. 31 (1995) p. 1288.
L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, and P.M. Fauchet, Appl. Phys. Lett. 68 (1996) p. 2058.
K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta, and P.M. Fauchet, Nature 384 (1996) p. 338.
A.G. Cullis and L.T. Canham, ibid. 353 (1991) p. 335.
J.P. Proot, C. Delerue, and G. Allan, Appl. Phys. Lett. 61 (1992) p. 1948
C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 48 (1993) p. 11024
T. Takagahara and K. Takeda, ibid. 46 (1992) p. 15578
S.B. Zang and A. Zunger, Appl. Phys. Lett. 63 (1993) p. 1399
M.S. Hybertsen, Phys. Rev. Lett. 72 (1994) p. 1514.
P.D.G. Calcott, K.J. Nash, L.T. Canham, M.J. Kane, and D. Brumhead, J. Phys: Cond. Matter 5 (1993) p. L91; J. Lumin. 57 (1993) p. 257.
Y. Kanemitsu, in Light Emission in Silicon, edited by D.J. Lockwood, Semiconductors and Semimetals, vol. 49 (Academic Press, San Diego, CA, 1998) p.
L.E. Brus, P.F. Szajowski, W.L. Wilson, T.D. Harris, S. Schuppler, and P.H. Citrin, J. Am. Chem. Soc. 117 (1995) p. 2915.
M. Rosenbauer, S. Finkbeiner, E. Bustarret, J. Weber, and M. Stutzmann, Phys. Rev. B 51 (1995) p. 10539.
D. Kovalev, H. Hecker, B. Averboukh, M. Ben-Chorin, M. Schwartzkopff, and F. Koch, ibid. 57 (1998) p. 3741.
W.E. Carlos and S.M. Prokes, Appl. Phys. Lett. 65 (1994) p. 1245
S.M. Prokes and O.J. Glembocki, Phys. Rev. B 49 (1994) p. 2238
S.M. Prokes, W.E. Carlos, and O.J. Glembocki, ibid. 50 (1994) p. 17093.
W.L. Wilson, P.F. Szajowski, and L.E. Brus, Science 262 (1993) p. 1242.
J. von Behren et al., Solid State Commun. 105 (1998) p. 317.
H. Mizuno, H. Koyama, and N. Koshida, Appl. Phys. Lett. 69 (1996) p. 3779.
P. Rao, E. A. Schiff, L. Tsybeskov, and P.M. Fauchet, in Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by R.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T. Shimada, and A.P. Alivisatos (Mater. Res. Soc. Symp. Proc. 452, Pittsburgh, 1997) p. 613.
L. Tsybeskov, K.D. Hirschman, L.F. Moore, P.M. Fauchet, and P.D.G. Calcott, ibid. p. 687.
L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, and P.M. Fauchet, ibid. p. 681.
L. Tsybeskov, S.P. Duttagupta, K.D. Hirschman, and P.M. Fauchet, in Advanced Luminescent Materials, edited by D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck (The Electrochemical Society, Pennington, NJ, 1996) p. 34.
L. Tsybeskov, K.L. Moore, P.M. Fauchet, and D.G. Hall, in Advances in Microcrystalline and Nanocrystalline Semiconductors-1996, edited by R.W. Collins, P.M. Fauchet, I. Shimizu, J.C. Vial, T Shimada, and A.P. Alivisatos (Mater. Res. Soc. Symp. Proc. 452, Pittsburgh, 1997) p. 523.
S.P. Duttagupta, P.M. Fauchet, C Peng, S.K. Kurinec, K. D. Hirschman, and T.N. Blanton, in Microcrystalline and Nanocrystalline Semiconductors, edited by R.W. Collins, C.C. Tsai, M. Hirose, F. Koch, and L. Brus (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, 1995) p. 647.
S. Frohnhoff and M.G. Berger, Adv. Mater. 6 (1994) p. 963.
V. Pellegrini, A. Tredicucci, C. Mazzoleni, and L. Pavesi, Phys. Rev. B 52 (1995) p. R14328
L. Pavesi, C. Mazzoleni, A. Tredicucci, and V. Pellegrini, Appl. Phys. Lett. 67 (1995) p..3280.
L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, P.M. Fauchet, M. Zacharias, P. Kohlert, J.P. McCoffrey, and D.J. Lockwood, in Proc. Quantum Confinement: Nanoscale Materials, Devices and Systems, edited by M. Cahay, J.P. Leburton, D.J. Lockwood, and S. Bandyopadhyay, vol. 97-11 (The Electrochemical Society, Pennington, NJ, 1997) p. 134.
L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, M. Zacharias, P.M. Fauchet, J.P. McCoffrey, and D.J. Lockwood, Appl. Phys. Lett. 72 (1) (1998) p. 43.
A.A. Bergh and P.J. Dean, Light-Emitting Diodes (Clarendon Press, Oxford, 1976) p. 591.
T.G. Brown and D.G. Hall, in Light Emission in Silicon: From Physics to Devices, edited by D.J. Lockwood, Semiconductors and Semimetals, vol. 49 (Academic Press, San Diego, 1998) p. 78.
L.T. Canham, MRS Bulletin XVIII (7) (1993) p. 22.
Rights and permissions
About this article
Cite this article
Tsybeskov, L. Nanocrystalline Silicon for Optoelectronic Applications. MRS Bulletin 23, 33–38 (1998). https://doi.org/10.1557/S0883769400030244
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400030244