References
M. Bruel, Electron. Lett. 31 (1995) p. 1201.
L. Di Cioccio, Y. Le Tiec, F. Letertre, C. Jaussaud, and M. Bruel, ibid. 32 (12) (1996) p. 1144.
E. Jalaguier, B. Aspar, S. Pocas, J.F. Michaud, M. Zussy, A.M. Papon, and M. Bruel, ibid. 34 (4) (1998) p. 408.
Q-Y. Tong, K. GutJahr, S. Hopfe, U. Gösele, and T-H. Lee, Appl. Phys. Lett. 70 (1997) p. 1390.
M.K. Weldon, V.E. Marsico, Y.J. Chabal, A. Agarwal, D.J. Eaglesham, J. Sapjeta, W.L. Brown, D.C. Jacobson, Y. Caudano, S.B. Christman, and E.E. Chaban, in Proc. Fourth Int. Symp. on Semiconductor Wafer Bonding: Science, Technology and Applications, vol. 97-36 (Electrochemical Society, Pennington, NJ, 1998) p. 229.
Q-Y. Tong, T-H. Lee, L-J. Huang, Y-L. Chao, W.J. Kim, R. Scholz, T-Y. Tan, and U. Gösele, ibid., vol. 97-36, edited by S.H. Grösele, H. Baumgart, T. Abe, C. Hunt, and S. Iyer (Electrochemical Society, Pennington, NJ, 1998) p. 521.
M. Bruel, U.S. Patent No. 5,374,564 (December 20, 1994).
Q-Y. Tong, R. Scholtz, U. Gösele, T-H. Lee, L-J. Huang, Y-L. Chao, and T-Y. Tan, Appl. Phys. Lett. 72 (1) (1998) p. 49.
C.G. Van der Walle, Phys. Rev. B 49 (1994) p. 4579.
S.J. Pearton, J.W. Corbett, and T.S. Shi, Appl. Phys. A 43 (1987) p. 153.
G.F. Cerofolini, R. Balboni, D. Bisero, F. Corni, S. Frabboni, G. Ottaviani, R. Tonini, R.S. Brusa, A. Zecca, M. Ceschini, G. Giebel, and L. Pavesi, Phys. Status Solidi A 150 (1995) p. 539.
Q-Y. Tong, L-J. Huang, Y-L. Chao, A. Ploessl, and U. Gösele, in Proc. 1998 IEEE Int. SOI Conf. (October 1998) p. 143.
P.J.H. Denteneer, C.G. Van der Walle, and S.T. Pantelides, Phys. Rev. B 39 (1989) p. 10809.
J.T. Borenstein, J.W. Corbett, and S.J. Pearton, J. Appl. Phys. 73 (1993) p. 2751.
G. Hess, P. Parkinson, B. Gong, Z. Xu, D. Lim, M. Downer, S. John, S. Banerjee, and J.G. Ekerdt, Appl. Phys. Lett. 71 (1997) p. 2184.
R.W. Bower, L. LeBoeuf, and Y.A. Li, Il Nuovo Cimento 19, D, N. 12 (1997) p. 1871.
A.D. Marwick, G.S. Oehrlein, and M. Wittmer, Appl. Phys. Lett. 59 (2) (1991) p. 198.
A. Agarwal, T.E. Haynes, V.C. Venezia, O.W. Holland, and D.J. Eaglesham, ibid. 72 (9) (1998) p. 1086.
Q-Y. Tong, T-H. Lee, L-J. Huang, Y-L. Chao, and U. Gösele, Electron. Lett. 34 (1998) p. 407.
L.B. Freund, Appl. Phys. Lett. 70 (1997) p. 3519.
L-J. Huang, Q-Y Tong, T-H. Lee, Y-L. Chao, and U. Gösele, in Proc. 8th Int. Symp. Silicon Materials Science and Technology, vol. 98-1, edited by H.R. Huff, H. Tsuya, and U. Gösele (Electrochemical Society, Pennington, NJ, 1998) p. 1373.
R.W. Bower and Y.A. Li, to be published.
Q-Y. Tong, T-H. Lee, L-J. Huang, Y-L. Chao, and U. Gösele, to be published.
R.W. Bower, M.S. Ismail, and B.E. Roberds, Appl. Phys. Lett. 28 (1993) p. 2485.
R.W. Bower, M.S. Ismail, U.S. Patent No. 5,503,704 (1996).
Y.A. Li and R.W. Bower, Jpn. J. Appl. Phys. 37 (3) (1998) p. 737.
R.W. Bower and Y.A. Li, in Proc. SP1E, Vol. 3184 (1997) p. 2.
Y.A. Li and R.W. Bower, Jpn. J. Appl. Phys. In press.
A. J. Auberton-Hervé, M. Bruel, B. Aspar, C. Maleville, and H. Moriciau, Smart-Cut®: IEICE Trans. Electron., vol. E80-C.3, March 1997.
R.W. Bower, Patent Applied for 1997.
Rights and permissions
About this article
Cite this article
Tong, QY., Bower, R.W. Beyond “Smart-Cut®”: Recent Advances in Layer Transfer for Material Integration. MRS Bulletin 23, 40–44 (1998). https://doi.org/10.1557/S0883769400029821
Published:
Issue Date:
DOI: https://doi.org/10.1557/S0883769400029821