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References
M. Watanabe and A. Tooi, ]pn. J. Appl. Phys. 5 (1966) p. 737.
V.M. Gusev, M.I. Guseva, V.V. Titov, V.S. Tsyplenkov, E.K. Baranova, and L.P. Steltsov, Radio Eng. Electron. Phys. 16 (1971) p. 1357.
J. Dylewski and M.C. Joshi, Thin Solid Films 37 (1976) p. 241.
M.H. Badawi and K.V. Anand, J. Phys. D 10 (1977) p. 1931.
J. Dylewski and M.C. Joshi, Thin Solid Films 42 (1977) p. 227.
K. Izumi, M. Doken, and H. Ariyoshi, Electron. Lett. 14 (18) (1978) p. 593.
K. Izumi, Vacuum 42 (1991) p. 333.
J.P. Ruffell, D.H. Douglas-Hamilton, R.E. Kaim, and K. Izumi, in Proc. 6th Int. Conf. on Implantation Technology (Executive Committee of International Ion Implantation Technology, 1986) p. 229.
S. Nakashima and K. Izumi, Electron. Lett. 26 (1990) p. 1647.
S. Nakashima, T. Katayama, Y. Miyamura, A. Matsuzaki, M. Imai, K. Izumi, and N. Ohwada, in Proc. IEEE Int. SOI Conf. (Institute of Electrical and Electronics Engineers, Nantucket, MA, 1994) p. 71.
G. Dearnaley, J.H. Freeman, R.S. Nelson, and J. Stephen, Ion Implantation, Appendix 3 (North-Holland, London, 1973) p. 766.
K. Izumi, Y. Omura, and S. Nakashima, Energy Beam-Solid Interactions and Transient Thermal Processing, edited by J.C.C. Fan and N.M. Johnson (Mater. Res. Soc. Symp. Proc. 23, Pittsburgh, 1984) p. 443.
K. Izumi, Y. Omura, M. Ishikawa, and E. Sano, VLSI Technol. Tech. Digest Symp. (1982) p. 10.
R.F. Pinizzotto, J. Cryst. Growth 63 (1983) p. 559.
C. Jaussaud, J. Stoemenos, J. Margail, M. Dupuy, B. Blanchard, and M. Bruel, Appl. Phys. Lett. 46 (1985) p. 1064.
G.K. Celler, P.L.F. Hemment, K.W. West, and J.M. Gibson, ibid. 48 (1986) p. 532.
D. Hill, P. Fraundorf, and G. Fraundorf, in Proc. IEEE SOS/SOI Technology Workshop (Institute of Electrical and Electronics Engineers, 1987) p. 29.
C. Jaussaud, J. Margail, J. Stoemenos, and M. Bruel, Silicon-on-Insulator and Buried Metals in Semiconductors, edited by J.C. Strum, C.K. Chen, L. Pfeiffer, and P.L.F. Hemment (Mater. Res. Soc. Symp. Proc. 107, Pittsburgh, 1988) p. 17.
S.J. Krause, C.O. Jung, T.S. Ravi, S.R. Wilson, and D.E. Burke, ibid. p. 93.
S. Visitserngtrakul, C.O. Jung, T.S. Ravi, B. Cordts, D.E. Burke, and S.J. Krause, Inst. Phys. Conf. Ser., No. 100 (IOP Publishing Ltd., 1989) p. 557.
S. Nakashima and K. Izumi, Nucl. Instrum. Methods Phys. Res. B 55 (1991) p. 847.
T. Katayama, S. Nakashima, Y. Miyamura, M. Kataoka, M. Danbata, M. Imai, K. Izumi, and N. Ohwada, in Proc. IEEE Int. SOI Conf. (Executive Committee of International Ion Implantation Technology, Nantucket, MA, 1994) p. 75.
K. Izumi, presented at SOI SEMICON/ West, Nantucket Island, MA, October 3–6, 1994.
M. Ino, H. Sawada, K. Nishimura, M. Urano, H. Suto, S. Date, T. Ishihara, T. Takeda, Y. Kado, H. Inokawa, T. Tsuchiya, Y Sakakibara, Y. Arita, K. Izumi, K. Takeya, and T. Sakai, IEEE ISSCC Digest (1996) p. 86.
Y. Ohtomo, S. Yasuda, M. Nogawa, J. Inoue, K. Yamakoshi, H. Sawada, M. Ino, S. Hino, Y. Sato, Y. Takei, T. Watanabe, and K. Takeya, ibid. (1997) p. 154.
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Izumi, K. History of SIMOX Material. MRS Bulletin 23, 20–24 (1998). https://doi.org/10.1557/S088376940002978X
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DOI: https://doi.org/10.1557/S088376940002978X