Abstract
Single crystal type A and type B CoxNi1-xSi2 layers have been grown on Si(111) by deposition of Co-Ni alloy in UHV and annealing. The dependence of CoxNi1-xSi2 layer orientation on the thickness of deposited metal is similar to that observed for pure nickel reaction. Silicon deposition along with the Co-Ni alloy allows the growth of type B oriented CoxNi1-xSi2. Auger, LEED, RBS and TEM analyses suggest that the composition of the ternary silicide layers is inhomogeneous. The advantages and disadvantages of this material in device application will be briefly discussed.
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Tung, R.T., Hellman, F., Gibson, J.M. et al. Growth of Single Crystal type A and type B CoxNi1-xSi2 Layers on Si(111). MRS Online Proceedings Library 91, 451–456 (1987). https://doi.org/10.1557/PROC-91-451
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DOI: https://doi.org/10.1557/PROC-91-451