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O12.6 Fracture and Deformation of Thermal Oxide Films on Si (100) Using a Femtosecond Pulsed Laser

MRS Online Proceedings Library volume 875, Article number: 126 (2005) Cite this article

Abstract

Femtosecond pulsed laser damage of Silicon (100) with thermal oxide thin films was studied in order to further understand the optical and electrical properties of thin films and to evaluate their influence on the damage of the substrate. The damage threshold as a function of film thickness (2 – 1200 nm) was measured. The damage morphology produced by single laser pulses was also investigated. Two primary morphologies were observed, one in which the oxide film is completely removed, and the other in which the film is delaminated and expanded above the surface producing a bubble feature.

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Author information

Affiliations

  1. Applied Physics Program, University of Michigan, 2477 Randall Laboratory, 48109-1120, Ann Arbor, MI, USA

    Joel P. McDonald

  2. College of Engineering, University of Michigan, Lurie Engineering Center, 1221 Beal Avenue, 48109-2102, Ann Arbor, MI, USA

    Vanita R. Mistry & Katherine E. Ray

  3. Deparment of Materials Science and Engineering, University of Michigan, 2200 Hayward Ave., 48109, Ann Arbor, MI, USA

    Steven M. Yalisove

  4. Center for Ultrafast Optical Science, University of Michigan, 1006 Gerstacker Building, 2200 Bonisteel Avenue, 48109, Ann Arbor, MI, USA

    Joel P. McDonald & Steven M. Yalisove

Authors
  1. Joel P. McDonald
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  2. Vanita R. Mistry
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  3. Katherine E. Ray
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  4. Steven M. Yalisove
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Corresponding author

Correspondence to Joel P. McDonald.

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McDonald, J.P., Mistry, V.R., Ray, K.E. et al. O12.6 Fracture and Deformation of Thermal Oxide Films on Si (100) Using a Femtosecond Pulsed Laser. MRS Online Proceedings Library 875, 126 (2005). https://doi.org/10.1557/PROC-875-O12.6

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