Temperature Dependence of Stress Distribution in Depth for Cu Thin Films


The stress distribution of (111) textured Cu films with depth was measured by using a GIXS method. We derived the equation to correct a scattering diffraction angle with depth, measured in the GIXS Seemann-Bohlin geometry, to obtain the actual scattering angle. It was revealed after the correction of the measured scattering angles that the internal stresses of (111) grains, on the whole, tend to increase almost linearly with increasing film depth from the free surface toward the substrate. It was suggested that these results were opposite to the results of the elastic calculation reported, and hence that a large stress relaxation took place during and/or after deposition and annealing. After annealing at various temperatures, these stress distribution profiles are almost unchanged, and are simply shifted uniformly in magnitude.

This is a preview of subscription content, access via your institution.


  1. 1.

    S. Takayama, M. Oikawa, and T. Himuro, Mat. Res. Soc. Symp. Proc. 795, 235 (2003).

    Article  Google Scholar 

  2. 2.

    M. F. Toney and T. C. Huang, J. Mater. Res. 3(2), 351 (1988).

    Article  CAS  Google Scholar 

  3. 3.

    M. F. Doerner and S. Brennan, J. Appl. Phys., 1, 126 (1988).

    Article  Google Scholar 

  4. 4.

    J. F. Nye: Physical Properties of Crystals (Oxford University Press, London, 2001) p.131.

    Google Scholar 

  5. 5.

    A. Brenner and S. Senderoff, J. Res. of National Bureau of Standard, 42, Nos. 1–6, 105 (1949)

    Article  CAS  Google Scholar 

  6. 6.

    M. Pang, M. B. Ricoult, and S. P. Baker, Mat. Res. Soc. Symp. Vol. 795, 75 (2004).

    CAS  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Tokuji Himuro.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Himuro, T., Takayama, S. Temperature Dependence of Stress Distribution in Depth for Cu Thin Films. MRS Online Proceedings Library 854, U11.11 (2004). https://doi.org/10.1557/PROC-854-U11.11

Download citation