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Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga,Mn)As Dilute Magnetic Semiconductors

MRS Online Proceedings Library volume 831, pages 394–399 (2004)Cite this article

Abstract

In this paper we report the effect of low temperature annealing on the high field magneto-transport properties of epitaxial thin films of (Ga,Mn)As Dilute Magnetic Semiconductor (DMS) with low concentration (1.5 %) of Mn doping, which results in a ferromagnetic insulator. Annealing at an optimal temperature enhances the conductivity, carrier concentration, and ferromagnetic transition temperature. The field dependence of magnetoresistance is different below and above the ferromagnetic transition temperature. An attempt is made to analyze the data using a theoretical model proposed by Kaminski and Das Sarma [1].

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Acknowledgments

Authors would like to thanks National High Field Magnet Laboratory (NHFML), Tallahassee, FL for providing experimental time to conduct high field magneto-transport measurements. This work is supported by Research Corporation (award number CC6166).

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Authors and Affiliations

  1. Department of Physics, Astronomy & Materials Science, Southwest Missouri State University, Springfield, MO, 65804, U.S.A.

    K. Ghosh, Mohammad Arif, T. Kehl, R. J. Patel & J. G. Broerman

  2. Department of Physics, University of Memphis, Memphis, TN, 38152, U.S.A.

    S. R. Mishra

Authors
  1. K. Ghosh
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  2. Mohammad Arif
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  3. T. Kehl
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  4. R. J. Patel
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  5. S. R. Mishra
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  6. J. G. Broerman
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Ghosh, K., Arif, M., Kehl, T. et al. Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga,Mn)As Dilute Magnetic Semiconductors. MRS Online Proceedings Library 831, 394–399 (2004). https://doi.org/10.1557/PROC-831-E3.21

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  • DOI: https://doi.org/10.1557/PROC-831-E3.21