Abstract
Non (0001) GaInN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1-100) compared to (11-20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.
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Acknowledgments
We thank G. Stareev (Uni Ulm) for technical support and M. Beer and J. Zweck (Uni Regensburg) for TEM measurements.
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Neubert, B., Habel, F., Bruckner, P. et al. Electroluminescence from GaInN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes. MRS Online Proceedings Library 831, 171–175 (2004). https://doi.org/10.1557/PROC-831-E11.32
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DOI: https://doi.org/10.1557/PROC-831-E11.32