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Electroluminescence from GaInN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes

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Abstract

Non (0001) GaInN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1-100) compared to (11-20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.

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Acknowledgments

We thank G. Stareev (Uni Ulm) for technical support and M. Beer and J. Zweck (Uni Regensburg) for TEM measurements.

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Authors and Affiliations

  1. Optoelectronics Department, University of Ulm, 89069, Ulm, Germany

    Barbara Neubert, Frank Habel, Peter Bruckner & Ferdinand Seholz

  2. Institute for Experimental Physics, Otto-von-Guericke Univ. Magdeburg, 39106, Magdeburg, Germany

    Till Riemann & Jürgen Christen

Authors
  1. Barbara Neubert
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  2. Frank Habel
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  3. Peter Bruckner
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  4. Ferdinand Seholz
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  5. Till Riemann
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  6. Jürgen Christen
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Neubert, B., Habel, F., Bruckner, P. et al. Electroluminescence from GaInN Quantum Wells Grown on Non-(0001) Facets of Selectively Grown GaN Stripes. MRS Online Proceedings Library 831, 171–175 (2004). https://doi.org/10.1557/PROC-831-E11.32

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  • DOI: https://doi.org/10.1557/PROC-831-E11.32

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